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专著名称:
IEEE 11th Int. Conf. on Solid-State and Integrated Circuit Technology
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主编单位: IEEE 11th Int. Conf. on Solid-State and Integrated Circuit Technology
出版时间: 2012-10-31
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编写人员: 刘洪刚
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著作性质: 半导体器件与技术
编辑出版单位: IEEE 11th Int. Conf. on Solid-State and Integrated Circuit Technology
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参编内容: GaSb pMOSFET源漏欧姆接触优化
著作简介: In this paper, source/drain ohmic contact for GaSb pMOSFETs has been extensively studied and optimized. Different concentrations of HCl-based solutions are used to clean the non-self limiting and non-stable native oxide layer of GaSb surface before source/drain ohmic contact metal deposition. Ni/Pt/Au, Ti/Pt/Au, Ni/Au, and Pt/Ti/Pt/Au contacts to p-type GaSb are investigated. The Ni/Pt/Au ohmic contact shows an optimal specific contact resistance of about 6.89×10-7 Ω·cm2 with 1 min RTA at 250 oC after the contact metal deposition.
其它备注: 国外出版-外文