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专著名称:
IMW2012
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主编单位: IMW2012
出版时间: 2012-05-20
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编写人员: 刘明
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著作性质: 电子、通信与自动控制技术
编辑出版单位: IMW2012
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参编内容: 一维厚度可缩小性对RRAM器件性能的研究
著作简介: Scaling is a key issue for resistive switching (RS) memory before commercialization. In this paper, for the first time, we reveal the impact of electrode diffusion on the device performance as the thickness of RS material scaling. Serious deterioration of on/off ratio and device yield was observed when the material scaled below 3 nm. A new method of two-step electrode deposition accompanied with re-oxidization process was employed to overcome this problem. Significant improvements of device performance such as low RESET current (~1 μA), high on/off ratio (100x) and 100% device yield were achieved thereafter.
其它备注: 国外出版-外文