研究队伍
 
 
 
 
 
 
 
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姓 名:
吕杭炳
性    别:
职 务:
职    称:
研究员
学 历:
博士
通讯地址:
北京市朝阳区北土城西路3号
电 话:
010-82995798
邮政编码:
100029
传 真:
010-82995583
电子邮件:
lvhangbing@ime.ac.cn

所属部门:
微电子器件与集成技术重点实验室
简历:

  教育背景

  2004.9~2009.1 复旦大学微电子系 博士

  2000.9~2004.7 山东大学物理系 学士

  工作简历

  2016.1~至今 中科院微电子研究所研究员

  2012.10~2015.12 中科院微电子研究所副研究员

  2012.3~2012.10 中科院微电子研究所助理研究员

  2010.3~2012.3 中科院微电子研究所博士后

  2009.1~2010.1 复旦大学微电子系助理研究员

研究方向:
新型不挥发存储器集成及应用;神经元计算网络
学科类别:
社会任职:

  1.IEEE会员; 

  2.IEEE ETDM TPC member; 

  3.Nature Asia MaterialsScientific ReportsAdvanced MaterialsIEEE Electronic Device LettersApplied Physics Letters等期刊审稿人; 

  4.IEDMVLSI Symp.等国际会议审稿人; 

    5.国家自然科学基金项目评审人

获奖及荣誉:
  1. 获国家重点研发计划青年科学家项目(纳米专项); 
  2. 获国家自然科学基金优秀青年科学基金项目(信息); 
  3. 2015年度中国科学院卢嘉锡青年人才奖; 
  4. 院青促会成员; 
  5. 北京市科学技术奖二等奖。
代表论著:

  1)     Qing Luo, Xiaoxin Xu, Hangbing Lv*, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Ling Li, Nianduan Lu, Ming Liu*, Fully BEOL Compatible TaOx-based Selector with High Uniformity and Robust Performance, Tech. Dig.-Int. Electron Devices Meet (IEDM), 2016. 

  2)     Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv*, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Jianfeng Gao, Nianduan Lu, Ming Liu*, Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays, Nanoscale, 8, 15629, 2016. 

  3)     Xiaoxin Xu, Qing Luo, Hangbing Lv*, Shibing Long, Qi Liu, Ling Li, Steve S. Chung, Jing Li, and Ming Liu*, Fully CMOS Compatible 3D Vertical RRAM with Self-aligned Self-selective Cell Enabling Sub-5nm Scaling, VLSI Symp. Tech. Dig., 2016, 8.4. 

  4)     Luo, Qing; Xu, Xiaoxin; Liu, Hongtao; Lv, Hangbing*; Gong, Tiancheng; Long, Shibing; Liu, Qi; Sun, Haitao; Writam Banerjee; Li, Ling; Gao, Jianfeng; Lu, Nianduan; Chung, Steve S.; Li, Jing; Liu, Ming*, Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory Cells, Tech. Dig.-Int. Electron Devices Meet (IEDM), 2015, 10.2.  

  5)     Luo, Qing; Xu, Xiaoxin; Liu, Hongtao; Lv, Hangbing*; Lu, Nianduan; Gong, Tiancheng; Long, Shibing; Liu, Qi; Sun, Haitao; Writam Banerjee; Li, Ling; Li, Jing; Liu, Ming*, Cu BEOL Compatible Selector with High Selective (>107), Extremely Low Off-current (~pA) and High Endurance (>1010), Tech. Dig.-Int. Electron Devices Meet (IEDM), 2015, 10.4. 

  6)     Lv, Hangbing; Xu, Xiaoxin Xu; Sun, Pengxiao; Liu, Hongtao; Luo, Qing; Liu, Qi; Banerjee, Writam; Sun, Haitao; Long, Shibing; Li, Ling; Liu, Ming*, Atomic View of Filament Growth in Electrochemical Memristive Elements. Scientific Reports, 5, 13311, 2015. 

  7)     Lv, Hangbing; Xu, Xiaoxin Xu; Liu, Hongtao; Liu, Ruoyu; Liu, Qi; Banerjee, Writam; Sun, Haitao; Long, Shibing; Li, Ling; Liu, Ming*, Evolution of conductive filament and its impact on the reliability issues in oxide-electrolyte based resistive random access memory, Scientific Reports, 5, 7764, 2015.  

  8)     Xu, Xiaoxin; Lv, Hangbing*; Li, Yuxiang; Liu, Hongtao; Wang, Ming; Liu, Qi; Long, Shibing; Liu, Ming*, Degradation of Gate Voltage Controlled MLC Storage in 1T1R Electrochemical Metallization Cell, IEEE, Electron Device Letters, 36(6), 555-557, 2015. 

  9)     Xu, Xiaoxin; Lv, Hangbing*; Liu, Hongtao; Gong, Tiancheng; Wang, Guoming; Zhang, Meiyun; Li, Yang; Liu, Qi; Long, Shibing; Liu, Ming, Superior Retention of Low Resistance State in Conductive Bridge Random Access Memory with Single Filament Formation, IEEE, Electron Device Lett. 36(2), 129-131, 2015. 

  10)   Liu, Hongtao; Lv, Hangbing*; Yang, Baohe; Xu, Xiaoxin; Liu, Ruoyu; Liu, Qi; Long, Shibing; Liu, Ming, Uniformity Improvement in 1T1R RRAM with Gate Voltage Ramp Programming”, IEEE, Electron Device Lett. 35(12), pp 1224-1226, 2014.  

  11)   Wang, Ming; Bi, Chong; Li, Ling; Long, Shibing; Liu, Qi; Lv, Hangbing; Lu, Nianduan; Sun, Pengxiao; Liu, Ming*, Thermoelectric Seebeck effect in oxide-based resistive switching memory, Nature Communications, 5, 2014.  

  12)   Sun, Haitao; Liu, Qi*; Li, Congfei; Long, Shibing; Lv, Hangbing; Bi, Cong; Huo, Zongliang; Li, Ling; Liu, Ming*, Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology, Advanced Functional Materials, 24(36), pp 5679-5687, 2014.  

  13)   Sun, Haitao; Lv, Hangbing*; Liu, Qi; Long, Shibing; Xie, Hongwei; Liu, Xiaoyu; Yang, Xiaoyi; Niu, Jiebin; Liu, Ming*, Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament, IEEE Electron Device Letters, 34(7), pp 873-875, 2013  

  14)   Lv, Hangbing; Li, Yingtao; Liu, Qi; Long, Shibing; Li, Ling; Liu, Ming*, Self-Rectifying Resistive-Switching Device With a-Si/WO3 Bilayer, IEEE Electron Device Letters, 34(2), pp 229-231, 2013   

  15)   Li, Yingtao; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Ming; Xie, Hongwei; Zhang, Kangwei; Huo, Zongliang; Liu, Ming*, Bipolar one diode-one resistor integration for high-density resistive memory applications, Nanoscale, 5(11), pp 4785-4789, 2013.  

  16)   Wang, Ming; Lv, Hangbing; Liu, Qi; Li, Yingtao; Xu, Zhongguang; Long, Shibing; Xie, Hongwei; Zhang, Kangwei; Liu, Xiaoyu; Sun, Haitao; Yang, Xiaoyi; Liu, Ming*, Investigation of One-Dimensional Thickness Scaling on Cu/HfOx/Pt Resistive Switching Device Performance, IEEE Electron Device Letters, 33(11), pp 1556-1558 , 2012.  

  17)   Liu, Qi; Sun, Jun; Lv, Hangbing; Long, Shibing; Yin, Kuibo; Wan, Neng; Li, Yingtao; Sun, Litao; Liu, Ming*, Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM, Advanced Materials, 24(14), pp 1844-1849, 2012.  

  18)   Lv, Hangbing*; Tang, Tingao, Performance improvement of CuxO resistive switching memory by surface modification, Applied Physics A-Materials Science & Processing, 102(4), pp 1015-1018, 2011.  

  19)   Lian, Wentai; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Wei; Wang, Yan; Li, Yingtao; Zhang, Sen; Dai, Yuehua; Chen, Junning; Liu, Ming*, Improved Resistive Switching Uniformity in Cu/HfO2/Pt Devices by Using Current Sweeping Mode, IEEE Electron Device Letters, 32(8), pp 1053-1055, 2011.   

  20)   Lv, Hangbing*; Tang, Tingao, The Role of CuAlO Interface Layer for Switching Behavior of Al/CuxO/Cu Memory Device, IEEE Electron Device Letters, 31(12), pp 1464-1466, 2010. 

  21)   Lv, Hangbing*; Wan, Haijun; Tang, Tingao, Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer, IEEE Electron Device Letters, 31(9), pp 978-980, 2010.  

  22)   Wang, Yan; Lv, Hangbing; Wang, Wei; Liu, Qi; Long, Shibing; Wang, Qin; Huo, Zongliang; Zhang, Sen; Li, Yingtao; Zuo, Qingyun; Lian, Wentai; Yang, Jianhong; Liu, Ming*, Highly Stable Radiation-Hardened Resistive-Switching Memory, IEEE Electron Device Letters, 31(12), pp 1470-1472, 2010.  

  23)   Liu, Qi; Long, Shibing; Lv, Hangbing; Wang, Wei; Niu, Jiebin; Huo, Zongliang; Chen, Junning; Liu, Ming*, Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode, ACS Nano, 4(10), pp 6162-6168, 2010.  

  24)   Lv, Hangbing*; Wang, Ming; Wan, Haijun; Song, Yali; Luo, Wenjing; Zhou, Peng; Tang, Tingao; Lin, Yinyin; Huang, Ryan; Song, Silo; Wu, Jingang; Wu, Hanming; Chi, Minhwa, Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode, Applied Physics Letters, 94(21), 2009.  

  25)   Lv, HB; Yin, M; Fu, XF; Song, YL; Tang, L; Zhou, P; Zhao, CH; Tang, TA; Chen, BA; Lin, YY; Resistive Memory Switching of Films for a Nonvolatile Memory Application, Electron Device Letters, IEEE, 29, 309-311, 2008 

  26)   Lv, HB; Yin, M; Song, YL; Fu, XF; Tang, L; Zhou, P; Zhao, CH; Tang, TA; Chen, BA; Lin, YY; Forming process investigation of CuxO memory films, Electron Device Letters, IEEE, 29, 47-49, 2008.  

承担科研项目情况:

  1.国家重点研发计划青年科学家项目

  “面向三维集成的阻变存储器纳米尺度效应研究”,2016.6-2021.5;

  2.自然科学基金优秀青年科学基金项目

  “阻变存储器集成与可靠性”, 2016.1-2018.12;

  3.863项目子课题

  “RRAM存储阵列设计和优化”, 2011.1-2015.12;

  4.自然科学基金面上项目

  “基于氧化物薄膜晶体管的不挥发性DRAM技术研究”, 2014.1-2017.12。

  专利授权

  1.Lv, Hangbing,Liu, Ming,Long, Shibing,et al.,Metal oxide resistive switching memory and method for manufacturing same,US,8,735,245.

  2.吕杭炳,刘明,刘琦,李颖弢,龙世兵,一种具有自整流特性的阻变存储器及其制备方法,中国,ZL201210311109.8。

  3.吕杭炳,刘明,龙世兵,刘琦,王艳花,牛洁斌,集成标准CMOS工艺的金属氧化物电阻存储器及其制备方法,2012.9.19-2031.3.18,中国,ZL201110066086.4。

  4.吕杭炳,刘明,龙世兵,刘琦,王艳花,牛洁斌,集成标准CMOS工艺的电阻存储器及其制备方法,2012.9.19-2031.3.18,中国,ZL201110066088.3。

  5.吕杭炳,刘琦,龙世兵,刘明,王艳花,“一种电阻型存储器的制备方法”,中国,ZL201210311116.8。

备注:
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