研究队伍
 
 
 
 
 
 
 
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姓 名:
罗军
性    别:
职 务:
职    称:
副研究员
学 历:
博士
通讯地址:
北京市朝阳区北土城西路3号
电 话:
010-82995876
邮政编码:
100029
传 真:
010-82995684
电子邮件:
luojun@ime.ac.cn

所属部门:
集成电路先导工艺研发中心
简历:

  教育背景

  1998.9-2002.7 中国地质大学(武汉)材化学院 电化学工程 工学学士

  2002.9-2005.7 厦门大学化学化工学院 材料科学与工程 工学硕士

  2005.9-2006.9 复旦大学微电子学系 微电子学与固体电子学 博士在读

  2006.9-2010.6 瑞典皇家工学院(KTH) 微电子与固体电子器件 工学博士

  工作简历

  2010.8-2012.9中国科学院微电子研究所集成电路先导工艺研发中心(十室) 助理研究员

  2012.9- 中国科学院微电子研究生集成电路先导工艺研发中心 副研究员

  2015.10- 中国科学院大学 岗位教授


研究方向:

集成电路工艺与器件 

金属硅化物及接触技术 

2D材料(石墨烯,MoSi2 etc.)与器件技术
学科类别:
社会任职:

中国科学院青年创新促进会会员 

Springer期刊Journal of Materials Science: Materials in Electronics编辑 

EDL, APL, JAP, Thin Solid Films, Vacuum审稿人 

2015年欧洲材料研究会(E-MRS)春季会议技术委员会(TPC)委员
获奖及荣誉:

多个国际著名学术期刊EDL, APL, JAP, Thin Solid Films, Vacuum审稿人

2011年度IEEE Electron Device Letters优秀审稿人
代表论著:

  1. J. Luo, J. Liu, E. Simoen, G. Wang, S. Mao, H. H. Radamson, N. Duan, J. Li, W. Wang, D. Chen, C. Zhao, T. Ye: (Invited) On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping. ECS Transactions 09/2016; 75(4). DOI:10.1149/07504.0219ecst 

  2. G. Wang, J. Luo, C. Qin, H. Cui, J. Liu, K. Jia, J. Li, T. Yang, H. Yin, C. Zhao, T. Ye, P. Yang, G. Jayakumar, H. H. Radamson: Integration of Selective Epitaxial Growth of SiGe/Ge Layers in 14nm Node FinFETs. ECS Transactions 09/2016; 75(8). DOI:10.1149/07508.0273ecst 

  3. Kunpeng Jia, Yajuan Su, Jun Zhan, Kashif Shahzad, Huilong Zhu, Chao Zhao, Jun Luo*: Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts. Nanomaterials 08/2016; 6(9). DOI:10.3390/nano6090158 

  4. Changliang Qin, Guilei Wang, M. Kolahdouz, Jun Luo, Huaxing Yin, Ping Yang, Junfeng Li, Huilong Zhu, Zhao Chao, Tianchun Ye, Henry H. Radamson: Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14nm node FinFETs. 

  5. Eddy Simoen, Marc Schaekers, Jinbiao Liu, Jun Luo, Chao Zhao, Kathy Barla, Nadine Collaert: Defect engineering for shallow ntype junctions in germanium: Facts and fiction. Physica Status Solidi (A) Applications and Materials 07/2016;  DOI:10.1002/pssa.201600491 

  6. Guilei Wang, Changliang Qin, Huaxiang Yin, Jun Luo*, Ningyuan Duan, Ping Yang, Xingyu Gao, Tao Yang, Junfeng Li, Jiang Yan, Huilong Zhu, WenWu Wang, Dapeng Chen, Tianchun Ye, Chao Zhao, Henry H. Radamson: Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14nm nodes FinFET technology. Microelectronic Engineering 06/2016; 163. DOI:10.1016/j.mee.2016.06.002 

  7. Chaochao Fu, Xiangbiao Zhou, Yan Wang, Peng Xu, Ming Xu, Dongping Wu, Jun Luo, Chao Zhao, Shi-Li Zhang: Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing. Materials 04/2016; 9(5). DOI:10.3390/ma9050315 

  8. Wen Fang, Anabela Veloso, Eddy simoen, M.-J. Cho, Nadine Collaert, Aaron Thean, Jun Luo, Chao Zhao, Tianchun Ye, Cor Claeys: Impact of the effective work function gate metal on the low-frequency noise of gate-all-around Silicon-on-Insulator NWFETs. IEEE Electron Device Letters 04/2016; 37(4). DOI:10.1109/LED.2016.2530849 

  9. Ningyuan Duan, Jun Luo*, Guilei Wang, Jinbiao Liu, Eddy Simoen, Shujuan Mao, Henry Radamson, Xiaolei Wang, Junfeng Li, Wenwu Wang, Chao Zhao, Tianchun Ye: Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation. IEEE Transactions on Electron Devices 01/2016;  DOI:10.1109/TED.2016.2610461 

  10. Kunpeng Jia, Yajuan Su, Jun Zhan, Kashif Shahzad, Huilong Zhu, Chao Zhao, Jun Luo*: Nanomaterials. 

  11. J. B. Liu, J. Luo, E. Simoen, Y. X. Niu, F. Yang, G. L. Wang, W. W. Wang, D. P. Chen, J. F. Li, C. Zhao, T. C. Ye: Junction Control by Carbon and Phosphorus Co-Implantation in Pre-Amorphized Germanium. 01/2016; 5(6). DOI:10.1149/2.0091606jss 

  12. Kunpeng Jia, Jun Luo, Rongyan Hu, Jun Zhan, Heshi Cao, Yajuan Su, Huilong Zhu, Ling Xie, Chao Zhao, Dapeng Chen, Tianchun Ye: Evaluation of PMMA Residues as a Function of Baking Temperature and a Graphene Heat-Free-Transfer Process to Reduce Them. 12/2015; 5(3). DOI:10.1149/2.0011603jss 

  13. E. Simoen, A. Alian, H. Arimura, D. Lin, H. Mertens, J. Mitard, S. Sioncke, W. Fang, J. Luo, C. Zhao, A. Mocuta, N. Collaert, A. Thean, C. Claeys: (Invited) The Assessment of Border Traps in High-Mobility Channel Materials. ECS Transactions 10/2015; 69(5). DOI:10.1149/06905.0205ecst 

  14. Y. Zhang, S. Wei, M. Li, C. Zhao, J. Luo*, C. Huang: Simulation and optimization of solid-state nanopore for single-nanoparticle detection. 

  15. Wenhui Chen, Jun Luo, Lingkuan Meng, Junjie Li, Jinjuan Xiang, Junfeng Li, Wenwu Wang, Dapeng Chen, Tianchun Ye, Chao Zhao: Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films. Thin Solid Films 10/2015;  DOI:10.1016/j.tsf.2015.10.032 

  16. Hushan Cui, Jun Luo, Jing Xu, Jianfeng Gao, Jinjuan Xiang, Zhaoyun Tang, Xiaolei Wang, Yihong Lu, Xiaobin He, Tingting Li, Bo Tang, Jiahan Yu, Tao Yang, Jiang Yan, Junfeng Li, Chao Zhao, Tianchun Ye: Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22 nm and beyond nodes CMOS technology. Vacuum 09/2015; 119. DOI:10.1016/j.vacuum.2015.05.021 

  17. Eddy Simoen, Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Régis Carin, Jun Luo, Chao Zhao, Cor Claeys: Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices. Solid State Phenomena 09/2015; 242. DOI:10.4028/www.scientific.net/SSP.242.449 

  18. Yiluan Guo, Guilei Wang, Chao Zhao, Jun Luo*: Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods. Journal of Semiconductors 08/2015; 36(8). DOI:10.1088/1674-4926/36/8/086001 

  19. Eddy Simoen, W. Fang, M. Aoulaiche, J. Luo, C. Zhao, C. Claeys: Random Telegraph Noise: The key to single defect studies in nano-devices. Thin Solid Films 08/2015;  DOI:10.1016/j.tsf.2015.08.037 

  20. Guilei Wang, M Moeen, A Abedin, Yefeng Xu, Jun Luo, Yiluan Guo, Changliang Qin, Zhaoyun Tang, Haizhou Yin, Junfeng Li, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye, M Kolahdouz, Henry H Radamson: Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs. Solid-State Electronics 07/2015; 114. DOI:10.1016/j.sse.2015.07.003 

  21. Yu Zhang, Guiya Liu, MinQuan Li, Jun Luo*, Chengjun Huang: Simulation analysis of nanopore performance in single-nanoparticle detection. 

  22. Wen Fang, Eddy Simoen, Hiroaki Arimura, Jerome Mitard, Sonja Sioncke, Hans Mertens, Anda Mocuta, Nadine Collaert, Jun Luo, Chao Zhao, Aaron Voon-Yew Thean, Cor Claeys: Low-Frequency Noise Characterization of GeO<sub> x </sub> Passivated Germanium MOSFETs. IEEE Transactions on Electron Devices 07/2015; 62(7). DOI:10.1109/TED.2015.2430367 

  23. Kunpeng Jia, Yajuan Su, Yang Chen, Jun Luo*, Jie Yang, Peng Lv, Zihan Zhang, Huilong Zhu, Chao Zhao, Tianchun Ye: Effects of defects and thermal treatment on the properties of graphene. Vacuum 06/2015; 116. DOI:10.1016/j.vacuum.2015.03.003 

  24. Qilong Bao, Tiankai Zhu, Ning Zhou, Shiping Guo, Jun Luo, Chao Zhao: Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue® MOCVD platform. Journal of Crystal Growth 06/2015; 419. DOI:10.1016/j.jcrysgro.2015.02.084 

  25. Xu Miao, Yin Huaxiang, Zhu Huilong, Ma Xiaolong, Xu Weijia, Zhang Yongkui, Zhao Zhiguo, Luo Jun, Yang Hong, Li Chunlong, Meng Lingkuan, Hong Peizhen, Xiang Jinjuan, Gao Jianfeng, Xu Qiang, Xiong Wenjuan, Wang Dahai, Li Junfeng, Zhao Chao, Chen Dapeng, Yang Simon, Ye Tianchun: Device parameter optimization for sub-20 nm node HK/MG-last bulk FinFETs. Journal of Semiconductors 04/2015; 36(4). DOI:10.1088/1674-4926/36/4/044007 

  26. Qiang Xu, Jun Luo, Guilei Wang, Tao Yang, Junfeng Li, Tianchun Ye, Dapeng Chen, Chao Zhao: Application of ALD W films as gate filling metal in 22nm HKMG-last integration: Evaluation and improvement of the adhesion in CMP process. Microelectronic Engineering 04/2015; 137(1). DOI:10.1016/j.mee.2015.01.007 

  27. Qingbo Liu, Guilei Wang, Ningyuan Duan, Henry Radamson, Hong Liu, Chao Zhao, Jun Luo*: Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n-and p-Type Ge Substrate. 02/2015; 4(5). DOI:10.1149/2.0041505jss] 

  28. Wen Fang, Eddy Simoen, Marc Aoulaiche, Jun Luo, Chao Zhao, Cor Claeys: Distinction between silicon and oxide traps using single-trap spectroscopy. Physica Status Solidi (A) Applications and Materials 02/2015; 212(3). DOI:10.1002/pssa.201400087 

  29. Qingbo Liu, Guilei Wang, Yiluan Guo, Xingxing Ke, Henry Radamson, Hong Liu, Chao Zhao, Jun Luo*: Effects of carbon pre-germanidation implant into Ge on the thermal stability of NiGe films. Microelectronic Engineering 02/2015; 133. DOI:10.1016/j.mee.2014.11.008 

  30. Qingbo Liu, Guilei Wang, Yiluan Guo, Xingxing Ke, Hong Liu, Chao Zhao, Jun Luo*: Optimization of a two-step Ni(5% Pt) germanosilicidation process and the redistribution of Pt in Ni(Pt)Si1−xGex germanosilicide. Vacuum 01/2015; 111. DOI:10.1016/j.vacuum.2014.10.007 

  31. Yiluan Guo, Jun Luo*, Guilei Wang, Xingxing Ke, Qingbo Liu, Chao Zhao: Systematic comparison between a new lattice kinetic Monte Carlo method and conventional polyhedron method for stress simulation in FinFETs. 

  32. Wen Fang, Eddy Simoen, Marc Aoulaiche, Jun Luo, Chao Zhao, Cor Claeys: Study of ΔID/ID of a single charge trap in utbox silicon films. 

  33. Eddy Simoen, Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Sara dos Santos, Jun Luo, Chao Zhao, Joao Antonio Martino, Cor Claeys: Towards single-trap spectroscopy: Generation-recombination noise in UTBOX SOI nMOSFETs. Physica Status Solidi (C) Current Topics in Solid State Physics 01/2015; 12(3). DOI:10.1002/pssc.201400075 

  34. Qingbo Liu, Wang Geilei, Yiluan Guo, Xingxing Ke, Henry Radamson, Hong Liu, Chao Zhao, Jun Luo*: Improvement of the Thermal Stability of Nickel Stanogermanide by Carbon Pre-Stanogermanidation Implant into GeSn Substrate. 01/2015; 4(3). DOI:10.1149/2.0041503jss] 

  35. Guilei Wang, Ahmad Abedin, Mahdi Moeen, Mohammadreza Kolahdouz, Jun Luo*, Yiluan Guo, Tao Chen, Huaxiang Yin, Huilong Zhu, Junfeng Li, Chao Zhao, Henry H Radamson: Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology. Solid-State Electronics 12/2014; 103. DOI:10.1016/j.sse.2014.07.008 

  36. Xing Wei, Jian Zhong, Jun Luo, Hao Wu, Huilong Zhu, Chao Zhao, Haizhou Yin: FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application. Solid-State Electronics 11/2014; 104. DOI:10.1016/j.sse.2014.10.011 

  37. Wenhui Chen, Jun Luo, Peixiong Shi, Chunlong Li, Xiaobin He, Peizhen Hong, Junfeng Li, Chao Zhao: Self-assembling Morphologies of Symmetric PS-b-PMMA in Different Sized Confining Grooves. RSC Advances 09/2014; 4(92). DOI:10.1039/C4RA09573A 

  38. LingKuan Meng, Chunlong Li, Xiaobin He, Jun Luo, Jiang Yan, Junfeng Li, Chao Zhao: Innovatively composite hard mask to feature sub-30nm gate patterning. Microelectronic Engineering 09/2014; 127. DOI:10.1016/j.mee.2014.02.010 

  39. Lichuan Zhao, Zhaoyun Tang, Bo Tang, Xueli Ma, Jinbiao Liu, Jinjuan Xiang, Jianfeng Gao, Chunlong Li, Xiaobin He, Cheng Jia, Mingzheng Ding, Hong Yang, Yefeng Xu, Jing Xu, Hongli Wang, Peng Liu, Peizhen Hong, Lingkuan Meng, Tingting Li, Wenjuan Xiong, Hao Wu, Junjie Li, Guilei Wang, Tao Yang, Hushan Cui, Yihong Lu, Xiaodong Tong, Jun Luo, Jian Zhong, Qiang Xu, Wenwu Wang, Junfeng Li, Huilong Zhu, Chao Zhao, Jiang Yan, Dapeng Chen, Simon Yang, Tianchun Ye: Mitigation of reverse short-channel effect with multilayer TiN/Ti/TiN metal gates in gate last PMOSFETs. IEEE Electron Device Letters 08/2014; 35(8). DOI:10.1109/LED.2014.2331356 

  40. Jun Luo, Zhi-Jun Qiu, Jian Deng, Chao Zhao, Junfeng Li, Wenwu Wang, Dapeng Chen, Dongping Wu, Mikael Östling, Tianchun Ye, Shi-Li Zhang: Effects of carbon pre-silicidation implant into Si substrate on NiSi. Microelectronic Engineering 05/2014; 120. DOI:10.1016/j.mee.2013.08.010 

  41. Jun Luo, Zhi-Jun Qiu, Jian Deng, Chao Zhao, Junfeng Li, Wenwu Wang, Dapeng Chen, Dongping Wu, Mikael Östling, Tianchun Ye, Shi-Li Zhang: Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements. Microelectronic Engineering 05/2014; 120. DOI:10.1016/j.mee.2013.09.003 

  42. C. K. Li, Wen Fang, Eddy Simoen, Marc Aoulaiche, Y. R. Wu, Jun Luo, Chao Zhao, Cor Claeys: Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs. ECS Transactions 03/2014; 60(1). DOI:10.1149/06001.0109ecst 

  43. Xiaodong Tong, Jun Luo, Hao Wu, Qingqing Liang, Huicai Zhong, Huilong Zhu, Chao Zhao: Two-terminal vertical memory cell for cross-point static random access memory applications. Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 03/2014; 32(2). DOI:10.1116/1.4865572 

  44. Qilong Bao, Jun Luo*, Chao Zhao: Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate. Vacuum 03/2014; 101. DOI:10.1016/j.vacuum.2013.08.015 

  45. Jian Deng, Qingbo Liu, Chao Zhao, Junfeng Li, Wenwu Wang, Dapeng Chen, Tianchun Ye, Jun Luo*: A modified scheme to tune the Schottky Barrier Height of NiSi by means of dopant segregation technique. Vacuum 01/2014; 99. DOI:10.1016/j.vacuum.2013.05.024 

  46. Q. Liu, Y. Guo, X. Ke, G. Wang, C. Zhao, H. Liu, J. Luo*: Effect of Pt redistribution on Ni(Pt)Si1-xGex germanosilicide. ECS Transactions 01/2014; 60(1). DOI:10.1149/06001.0139ecst 

  47. G L Wang, M Moeen, A Abedin, M Kolahdouz, J Luo*, C L Qin, H L Zhu, J Yan, H Z Yin, J F Li, C Zhao, H H Radamson: Optimization of SiGe selective epitaxy for source/drain engineering in 22nm node complementary metal-oxide semiconductor (CMOS). Journal of Applied Physics 09/2013; 114(123511). DOI:10.1063/1.4821238 

  48. Peng Xu, Chaochao Fu, Cheng Hu, David Wei Zhang, Dongping Wu, Jun Luo, Chao Zhao, Zhi-Bin Zhang, Shi-Li Zhang: Ultra-shallow junctions formed using microwave annealing. Applied Physics Letters 03/2013; 102(12). DOI:10.1063/1.4799030 

  49. Shu J. Mao, Li C. Zhao, Jun. Luo, Jiang. Yan: A New Solution to the Ni-fill issue for Silicide-last Process. MRS Online Proceeding Library Archive 01/2013; 1559. DOI:10.1557/opl.2013.871 

  50. Yi Song, Jun Luo, Xiuling Li: Vertically stacked individually tunable nanowire field effect transistors for low power operation with ultrahigh radio frequency linearity. Applied Physics Letters 08/2012; 101(9). DOI:10.1063/1.4747448 

  51. Yinghua Piao, Zhiwei Zhu, Xindong Gao, Aliaksandra Karabko, Cheng Hu, Zhijun Qiu, Jun Luo, Zhi-Bin Zhang, Shi-Li Zhang, Dongping Wu: Extensive Raman spectroscopic investigation of ultrathin Co1-xNixSi2 films grown on Si(100). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 07/2012; 30(4). DOI:10.1116/1.4726295 

  52. Yi Song, Qiuxia Xu, Jun Luo, Huajie Zhou, Jiebin Niu, Qingqing Liang, Chao Zhao: Performance Breakthrough in Gate-All-Around Nanowire n- and p-Type MOSFETs Fabricated on Bulk Silicon Substrate. IEEE Transactions on Electron Devices 07/2012; 59(7). DOI:10.1109/TED.2012.2194785 

  53. Jun Luo, Xindong Gao, Zhi-Jun Qiu, Jun Lu, Dongping Wu, Chao Zhao, Junfeng Li, Dapeng Chen, Lars Hultman, Shi-Li Zhang: Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi2-y. IEEE Electron Device Letters 09/2011; 32(8-32). DOI:10.1109/LED.2011.2157301 

  54. Jun Luo, Dongping Wu, Zhijun Qiu, Jun Lu, Lars Hultman, Mikael Ostling, Shi-Li Zhang: On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain. IEEE Transactions on Electron Devices 08/2011; 58(7-58). DOI:10.1109/TED.2011.2145381 

  55. Yi Song, Huajie Zhou, Qiuxia Xu, Jun Luo, Haizhou Yin, Jiang Yan, Huicai Zhong: Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status. Journal of Electronic Materials 07/2011; 40(7). DOI:10.1007/s11664-011-1623-z 

  56. Yi Song, Huajie Zhou, Qiuxia Xu, Jun Luo, Chao Zhao, Qingqing Liang: High performance N- and P-type gate-all-around nanowire MOSFETs fabricated on bulk Si by CMOS-compatible process. 06/2011;  DOI:10.1109/DRC.2011.5994423 

  57. Mikael Ostling, Jun Luo, Valur Gudmundsson, Per-Erik Hellstrom, B. Gunnar Malm: Technology challenges in silicon devices beyond the 16 nm node. 

  58. Mikael Östling, Jun Luo, Valur Gudmundsson, Per-Erik Hellström, B. Gunnar Malm: Integration of metallic source/drain (MSD) contacts in nanoscaled CMOS technology. 

  59. Jun Lu, Jun Luo, Shi-Li Zhang, Mikael Ostling, Lars Hultman: On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001). Electrochemical and Solid-State Letters 10/2010; 13(10-10). DOI:10.1149/1.3473723 

  60. Jun Luo, Zhijun Qiu, Chaolin Zha, Zhen Zhang, Dongping Wu, Jun Lu, Johan Akerman, Mikael Ostling, Lars Hultman, Shi-Li Zhang: Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1-xPtx silicide films. Applied Physics Letters 01/2010; 96(3-3). DOI:10.1063/1.3291679 

  61. Mikael Östling, Jun Luo, Valur Gudmundsson, Per-Erik Hellström, B. Gunnar Malm: Nanoscaling of MOSFETs and the implementation of Schottky barrier S/D contacts. 

  62. Jun Luo, Zhi-Jun Qiu, Zhen Zhang, Mikael Ostling, Shi-Li Zhang: Interaction of NiSi with dopants for metallic source/drain applications. Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/2010; 28(1-1). DOI:10.1116/1.3248267 

  63. Jie Tian, Wei Yan, Yazhao Liu, Jun Luo, Daozhong Zhang, Zhiyuan Li, Min Qiu: Optical Quality Improvement of Si Photonic Devices Fabricated by Focused-Ion-Beam Milling. Journal of Lightwave Technology 11/2009; 27(19-27). DOI:10.1109/JLT.2009.2023607 

  64. Jun Luo, Zhi-Jun Qiu, David Wei Zhang, P.-E. Hellstrom, Mikael Ostling, Shi-Li Zhang: Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation. IEEE Electron Device Letters 07/2009; 30(6-30). DOI:10.1109/LED.2009.2018285 

  65. Valur Gudmundsson, P.-E. Hellstrom, Jun Luo, Jun Lu, Shi-Li Zhang, M. Ostling: Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation. IEEE Electron Device Letters 06/2009; 30(5-30). DOI:10.1109/LED.2009.2015900 

  66. Zhao Xian Xiong, X. Xue, Hong Qiu, C. Zhang, C. Fang, J. Luo, D. Y. Bao, W. Liu, F. Xiao, Chang Jian Lin, B. Q. You, Zhen Xing Yue: Microwave Dielectric Ceramics and Devices for Wireless Technologies. Key Engineering Materials 01/2008; 368-372. DOI:10.4028/www.scientific.net/KEM.368-372.154 

  67. S.S. Cheng, J. Luo, Z.X. Xiong: Dielectric properties of Ba(Mg0.2/3Zn0.8/3Nb 2/3)O3 and Ba1-xSrx(Mg 0.2/3Zn0.8/3Nb2/3)O3 microwave ceramics. Key Engineering Materials 01/2007; 336. 

  68. S. S. Cheng, J. Luo, Zhao Xian Xiong: Dielectric Properties of Ba(Mg 0.2/3 Zn 0.8/3 Nb 2/3 )O 3 and Ba 1-x Sr x (Mg 0.2/3 Zn 0.8/3 Nb 2/3 )O 3 Microwave Ceramics. 

  69. J. Luo, Z. Y. Pang, Y. S. Lin, Zhao Xian Xiong: Influences of MnCO 3 Doping on Processing Parameters and Dielectric Properties of ZnNb 2 O 6 Microwave Ceramics. Key Engineering Materials 01/2005; 280-283. DOI:10.4028/www.scientific.net/KEM.280-283.23 

  70. Qingzhu Zhang, Huaxiang Yin, Jun Luo, Hong Yang, Lingkuan Meng, Yudong Li, Zhenhua Wu, Yanbo Zhang, Yongkui Zhang, Changliang Qin, Junjie Li, Jianfeng Gao, Guilei Wang, Wenjuan Xiong, Jinjuan Xiang, Zhangyu Zhou, Shujian Mao, Gaobo Xu, Jinbiao Liu, Yang Qu, Tao Yang, Junfeng Li, Qiuxia Xu, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye: FOI FinFET with Ultra-low Parasitic Resistance Enabled by Fully Metallic Source and Drain Formation on Isolated Bulk-Fin. 2016 IEEE International Electron Devices Meeting (IEDM); 09/2016 

  71. E. Simoen, C. Claeys, W. Fang, J. Luo, C. Zhao: Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI. 2015 International Conference on Noise and Fluctuations (ICNF); 06/2015 

  72. W. Fang, J. Luo, C. Zhao, E. Simoen, H. Arimura, J. Mitard, A. Thean, C. Claeys: Low-frequency noise study of Ge p-MOSFETs with HfO2/Al2O3/GeOx gate stack. 2015 International Conference on Noise and Fluctuations (ICNF); 06/2015 

  73. Yu Zhang, Jun Lao, Yangsong Liu, Minquan Li, Chao Zhao, Chengjun Huang: Electrical detection of single particle in cylindrical solid-state nanopores. Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on; 06/2015 

  74. JB Liu, J Luo, JF Li, C Chen, Guilei Wang, T.   Chen, T.T.   Li, J.   Zhong, D.P. Wu, P.   Xu, C.  Zhao: Co-implantation with microwave annealing for phosphorous shallow-junction formation in Germanium. Ion Implantation Technology (IIT), 2014 20th International Conference on; 06/2014 

  75. Guilei Wang, Qiang Xu, Tao Yang, Jun Luo, Jinjuan Xiang, Jing Xu, Gaobo Xu, Chunlong Li, Junfeng Li, Jiang Yan, Chao Zhao, Dapeng Chen, Tianchun Ye: Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology. 224th ECS Meeting; 11/2013 

  76. Hushan Cui, Jing Xu, Jianfeng Gao, Jinjuan Xiang, Yihong Lu, Zhaoyun Tang, Xiaobin He, Tingting Li, Jun Luo, Xiaolei Wang, Bo Tang, Jiahan Yu, Tao Yang, Jiang Yan, Junfeng Li, Chao Zhao: Evaluation of TaN as the wet etch stop layer during the 22nm HKMG gate last CMOS integrations. 224th ECS Meeting; 10/2013 

  77. Jian Deng, Jun Luo*, Chao Zhao, Junfeng Li, Wenwu Wang, Dapeng Chen, Tianchun Ye, Hanming Wu: A more CMOS process compatible scheme to tune the Schottky Barrier Height of NiSi to electrons by means of dopant segregation (DS) technique. Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on; 10/2012 

78. Shu-Juan Mao, Jun Luo, Jiang Yan: Gap fill capability of Ni PVD based on silicide-last process. Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on; 10/2012

承担科研项目情况:
  1. 国家自然科学基金面上项目  癌症患者血循环肿瘤细胞装置的应用研究2014.1-2017.1282万元,主持人,在研 
  2. 国家自然科学基金今年项目,采用PRCVD外延法在硅衬底上直接制备石墨烯的研究2014.1-2016.1230万元,主持人,在研 
  3. 中国科学院微电子所所长基金,“Si衬底外延生长GaNGaN-on-Si HEMTs相关研究2012.1-2013.120万元,主持人,已结题 
  4. 国家02科技重大专项,极大规模集成电路装备及成套工艺子课题“22 nm平面器件2010.8-2014.8,参与人 
  5. 国家02科技重大专项,极大规模集成电路装备及成套工艺子课题“16/14nm FinFET器件2013.8-,参与人

专利申请:

  国内外专利申请101项,其中国内专利申请83项,国际专利申请18 

  国内专利申请(部分): 

  1.     罗军,赵超,半导体器件及其制造方法,申请号:201010553050.4 

  2.     罗军,赵超,半导体器件及其制造方法,申请号:201010571659.4 

  3.     罗军,赵超,半导体器件及其制造方法,申请号:201010576904.0 

  4.     罗军,赵超,半导体器件及其制造方法,申请号:201010577852.9 

  5.     罗军,赵超,钟汇才,自对准金属硅化物的形成方法,申请号:201010599252.2 

  6.     罗军,赵超,钟汇才,MOS晶体管及其制作方法,申请号:201010612589.2 

  7.     罗军,赵超,半导体器件及其制造方法,申请号:201110006429.8 

  8.     罗军,赵超,半导体器件及其制造方法,申请号:201110020536.6 

  9.     罗军,赵超,半导体器件及其制造方法,申请号:201110021062.7 

  10.    罗军,赵超,钟汇才,李俊峰,改进MOSFETs镍基硅化物热稳定性的方法,申请号: 201110074395.6 

  11.    罗军,赵超,钟汇才,李俊峰,热稳定性镍基硅化物源漏MOSFETs及其制造方法,申请号:201110074604.7 

  12.    罗军,赵超,钟汇才,李俊峰,半导体器件及其制造方法,申请号:201110104362.1 

  13.    罗军,赵超,钟汇才,李俊峰,半导体器件及其制造方法,申请号:201110159506.3 

  14.    罗军,赵超,钟汇才,李俊峰,纳米线制造方法,申请号:201110159421.5 

  15.罗军,赵超,李俊峰,多栅晶体管及其制造方法,申请号:201110199673.0 

  16.罗军,赵超,钟汇才,李俊峰,半导体器件及其制造方法,申请号:201110228166.5 

  17.罗军,赵超,半导体器件及其制造方法,申请号:201110234503.1 

  18.罗军,赵超,半导体器件及其制造方法,申请号:201110234502.7 

  19.罗军,赵超,低源漏接触电阻MOSFETs及其制造方法,申请号:201110263766.5 

  20.罗军,赵超,低源漏接触电阻MOSFETs及其制造方法,申请号:201110264987.4 

  21.罗军,赵超,半导体器件制造方法,申请号:201110347563.4 

  22.罗军,赵超,钟汇才,李俊峰,陈大鹏,具有提升硅化物源漏接触的MOSFETs及其制造方法,申请号:201110377995.x 

  23.罗军,赵超,钟汇才,李俊峰,陈大鹏,半导体器件制造方法,申请号:201110391447.2 

  24.罗军,赵超,钟汇才,李俊峰,陈大鹏,半导体器件制造方法,申请号:201110419334.9 

  25.罗军,赵超,钟汇才,李俊峰,陈大鹏,半导体器件制造方法,申请号:201110425474.7 

  26.罗军,邓坚,赵超,钟汇才,李俊峰,陈大鹏,金属硅化物制造方法,申请号:201210118972.1 

  27.罗军,邓坚,赵超,钟汇才,李俊峰,陈大鹏,半导体器件制造方法,申请号:201210134103.8 

  28.罗军,邓坚,赵超,钟汇才,李俊峰,陈大鹏,半导体器件制造方法,申请号:201210135041.2 

  29.罗军,邓坚,赵超,钟汇才,李俊峰,陈大鹏,半导体器件制造方法,申请号:201210133853.3 

  30.罗军,邓坚,赵超,钟汇才,李俊峰,陈大鹏,半导体器件制造方法,申请号:201210147554.5 

  31.尹海洲,罗军,朱慧珑,骆志炯,一种半导体结构及其制造方法,申请号:201010572608.3 

  32.尹海洲,罗军,骆志炯,朱慧珑,一种半导体结构及其制造方法,申请号:201010572616.8 

  33.朱慧珑,李春龙,罗军,半导体器件的形成方法,申请号:201010617419.3 

  34.赵超,罗军,陈大鹏,叶甜春,具有高击穿电压的HEMT及其制造方法,申请号:201110116103.0 

  35.赵超,罗军,钟汇才,王文武,金属源漏SOI MOS晶体管及其形成方法,申请号:201110161231.7 

  36.尹海洲,罗军, 朱慧珑,骆志炯,一种晶体管及其制作方法和包括该晶体管的半导体芯片,申请号:201110188060.7 

  37.钟汇才,罗军,梁擎擎,朱慧珑半导体器件结构及其制作方法、及半导体鳍制作方法,申请号:201110198177.3 

  38.钟汇才,罗军,赵超,梁擎擎,半导体器件的制造方法,申请号:201110236626 

  39.殷华湘,罗军,赵超,刘洪刚,陈大鹏,半导体器件及其制造方法,申请号:201110339415.8 

  40.朱慧珑,李春龙,罗军,钟汇才,梁擎擎,叶甜春,半导体器件及其制造方法,申请号:201210065168.1 

  41.梁擎擎,罗军,钟汇才,赵超,朱慧珑,半导体器件及其制造方法,申请号:201110329579.2 

  42.赵超,罗军,钟汇才,王文武,金属源漏SOI MOSFETs及其制造方法,申请号:201110161231.7 

  43.包琦龙,罗军,赵超,高电子迁移率晶体管及其制造方法,申请号:201210343035.6 

  44.包琦龙,罗军,赵超,高电子迁移率晶体管及其制造方法,申请号:201210343034.1 

  国际专利申请: 

  1. 罗军,赵超,半导体器件及其制造方法,PCT/CN2011/07782 

  2. 罗军,赵超,自对准金属硅化物的形成方法,PCT/CN2011/070698 

  3. 罗军,赵超,半导体器件及其制造方法,PCT/CN2011/071356 

  4. 罗军,赵超,半导体器件及其制造方法,PCT/CN2011/000711 

  5. 罗军,赵超,半导体器件及其制造方法,PCT/CN2011/000712 

  6. 罗军,赵超,半导体器件及其制造方法,PCT/CN2012/072984 

  7. 罗军,赵超,半导体器件及其制造方法,PCT/CN2012/072985 

  8. 罗军,赵超,半导体器件及其制造方法,PCT/CN2012/000780 

  9. 殷华湘,赵超,罗军,陈大鹏,半导体器件的制作方法,PCT/CN2011/001965 

  10.朱慧珑,李春龙,罗军,半导体器件及其制造方法,PCT/CN2011/071488  

  11.尹海洲,罗军,朱慧珑,骆志炯,一种半导体结构及其制造方法,PCT/CN2011/071350 

  12.尹海洲,罗军,骆志炯,朱慧珑,一种半导体结构及其制造方法,PCT/CN2011/072917 

  13.尹海洲,罗军,骆志炯,朱慧珑,一种半导体结构及其制造方法,PCT/CN2011/001309 

  14.钟汇才,罗军,赵超,朱慧珑,梁擎擎,半导体器件结构及其制作方法,PCT/CN2011/079040 

  15.钟汇才,罗军,赵超,朱慧珑,梁擎擎,半导体器件结构及其制作方法及半导体鳍制作方法,PCT/CN2011/082420 

  16.钟汇才,罗军,赵超,朱慧珑,梁擎擎,半导体器件的制作方法,PCT/CN2011/083471 

  17.赵超,罗军,半导体场效应晶体管及其制作方法,PCT/CN2012/000377 

18.朱慧珑,李春龙,罗军,一种半导体器件的形成方法,PCT/CN2011/071488

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