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姓 名:
黄森
性    别:
职 务:
职    称:
副研究员
学 历:
博士
通讯地址:
北京市朝阳区北土城西路3号
电 话:
010-82995595
邮政编码:
100029
传 真:
电子邮件:
huangsen@ime.ac.cn

所属部门:
微波器件与集成电路研究室(四室)
简历:

教育背景
2000-2004:大连理工大学物理系 电子科学技术专业, 学士
2004-2009:北京大学物理学院 凝聚态物理专业, 博士
工作简历
2009-2012:香港科技大学电子工程系 博士后
2012- :中科院微电子研究所 副研究员

研究方向:

高压高效GaN-on-Si功率电子器件及模块研究;III-V族化合物半导体电子器件的先进制备工艺,表征技术及器件物理研究 

学科类别:
社会任职:
获奖及荣誉:
代表论著:

  [1] S. Huang, B. Shen, M. J. Wang, F. J. Xu, Y. Wang et al., “Current transport mechanism of Au∕Ni∕GaN Schottky diodes at high temperatures,” Applied Physics Letters, vol. 91, no. 7, p. 072109, Aug. 2007. 

  [2] S. Huang, Q. M. Jiang, S. Yang, C. H. Zhou, and K. J. Chen, “Effective Passivation of AlGaN/GaN HEMTs by ALD-grown AlN Thin Film,” IEEE Electron Device Letters, vol. 33, no. 4, p. 516, Mar. 2012. 

  [3] S. Huang, Q. M. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs: Compensation of interface trap states by polarization charges,” IEEE Electron Device Letters, vol. 34, no. 2, p. 193, Feb. 2013. 

  [4] S. Huang, K. Wei, G. Liu, Y. Zheng, X. Wang, L. Pang, X. Kong, X. Liu, Z. Tang, S. Yang, Q. Jiang, and K. J. Chen, “High fMAX high Johnson’s figure-of-merit 0.2 μm gate AlGaN/GaN HEMT on Silicon substrate with AlN/SiNx passivation,” IEEE Electron Device Letters, vol. 35, no. 3, p. 315, Mar. 2014. 

  [5] S. Huang, S. Yang, J. Roberts, and K. J. Chen, “Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors,” Japanese Journal of Applied Physics. vol. 50, no. 11, p. 110202, Oct. 2011. 

  [6] S. Huang, H. W. Chen, and K. J. Chen, “Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlxGa1-xN∕GaN heterostructures,” Applied Physics Letters, vol. 96, no. 23, p. 233510, Jun. 2010. 

  [7] S. Huang, B. Shen, F. J. Xu, F. Lin, Z. L. Miao et al., “Study of the leakage current mechanism in Schottky contacts to Al0.25Ga0.75N∕GaN heterostructures with AlN interlayers,” Semiconductor Science and Technology, vol. 24, no. 5, p. 055005, May 2009. 

  [8] S. Huang, B. Shen, F. Lin, N. Ma, F. J. Xu et al., “Ni diffusion and its influence on electrical properties of AlxGa1-xN∕GaN heterostructures,” Applied Physics Letters, vol. 93, no. 17, p. 172102, Oct. 2008. 

  [9] S. Huang, K. Wei, Z. Tang, S. Yang, C. Liu et al., “Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation,” Journal of Applied Physics. vol. 114, no. 14, p. 144509, Oct. 2013. 

  专  利 

  [1] Kevin Jing Chen, Sen Huang, Qimeng Jiang, and Zhikai Tang, “Passivation of group III-nitride heterojunction devices,” US 2013/0306978 A1. 

  [2] 黄森等,“GaN基高电子迁移率晶体管的低温无金欧姆接触的制作方法”,专利号:201310632276.7. 

承担科研项目情况:

  作为项目负责人承担国家自然科学基金面上项目“基于极化电荷补偿界面态钝化理论的GaN基功率开关可靠性及增强技术研究”(61474138)。 

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