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姓 名:
申华军
性    别:
职 务:
职    称:
研究员
学 历:
博士
通讯地址:
北京市朝阳区北土城西路3号
电 话:
010-82995593
邮政编码:
100029
传 真:
电子邮件:
shenhuajun@ime.ac.cn

所属部门:
微波器件与集成电路研究室(四室)
简历:
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研究方向:
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学科类别:
社会任职:
获奖及荣誉:
代表论著:

1. Jingtao Zhou, Huajun Shen, et al., “Design and fabrication of an ultra-compact multimode interference splitter integrated with silicon photonic wires”, Chinese Optics Letters, 2009
2. Huihui Zhang, Huajun Shen, et al., “Applications of Silicon-based Photonic Crystal”, Progress in Electromagnetics Research Symposium, Beijing, CHINA, 23-27 March, 2009, 980-982

3. Jingtao Zhou, Huajun Shen, et al., “Fabrication of a two-dimensional photonic crystals using reactive ion etching”, the 11th IEEE International Conference on Communication Systems, Guangzhou, China, 2008, T-PM-06

4. Zhihua Li, Huajun Shen, et al., “An Edge-View-Photodetector for Simplification of Optical Packaging”, 2007 8th International Conference on Electronics Packaging Technology, Shanghai China, August 14-17, 2007: 563-565

5. Z.H. Li, H.J. Shen, et al., “Edge-View-Photodetector for Optical Interconnects”, Optics Letters, 2007, 32: 2906-2908

6. 申华军,葛霁,杨威,等.“发射机空气桥InGaP/GaAs HBT的DC和RF特性分析”,电子器件,2007,30(1):1-4

7. 申华军,陈延湖,严北平,等.“GaAs MMIC用无源元件的模型”,半导体学报,2006,27(10):1872-1879

8. 申华军,陈延湖,严北平,等.“C波段3.5W/mm,PAE>40%的InGaP/GaAs HBT功率管”,半导体学报,2006,27(9):1612-1615

9. 申华军,陈延湖,葛霁,等.“5.4 GHz 1W InGaP/GaAs HBT功率管”,全国微波毫米波会议,2005,Part C:1506-1508

10. Shen Huajun, Chen Yanhu, Ge Ji, et al., “DC and High-frequency Characteristics of High Breakdown Voltage InGaP/GaAs HBTs for Power Applications”, The Proceedings of the 14th National Conference on Integrated Circuit and Silicon Material, Part A:550-553

承担科研项目情况:

1.参与国家重点基础研究发展计划(973)项目子课题“新结构HBT器件”和中国科学院知识创新工程重大项目“新型高频、大功率化合物半导体电子器件研究”课题;
2.参与863项目“芯片-芯片并行高速高密度光互连关键技术”课题;
3.承担知识创新工程领域前沿课题“硅基微光子学中光电探测技术”、“基于CMOS平台的Si基光电集成。

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