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姓 名:
殷华湘
性    别:
职 务:
职    称:
研究员
学 历:
博士
通讯地址:
北京市朝阳区北土城西路3号
电 话:
010-82995831
邮政编码:
100029
传 真:
电子邮件:
yinhuaxiang@ime.ac.cn

所属部门:
集成电路先导工艺研发中心(十室)
简历:
教育背景
1992.9-1996.7:天津大学电子工程系半导体器件与物理专业,获工学学士学位
1996.9-1999.7:中国科学院微电子研究所,微电子学与固体电子学专业,获工学硕士学位
2000.3-2003.3:中国科学院微电子研究所,微电子学与固体电子学专业,获工学博士学位
工作简历
• 1997.9-2003.3:中国科学院微电子研究所硅器件与集成技术研究室(一室),任研究助理,从事新型硅基CMOS器件与深亚微米集成电路技术研究
• 2003.7-2010.7:韩国三星电子(集团)综合技术院半导体研究室,任高级研究员,从事高性能多晶硅与新型氧化物薄膜晶体管的研究,负责过两个项目的研究
• 2010.8至今:中国科学院微电子研究所先导工艺研发中心(十室),任研究员,入选科学院“百人计划”,从事先进集成电路技术、新型氧化物传感器件研究
研究方向:

高级硅MOS器件,集成电路工艺技术与新型平板显示、传感器件

学科类别:
社会任职:
获奖及荣誉:
代表论著:

超过30余篇学术论文与10余次国际学术报告。

主要的学术论文:

1.      Huaxiang Yin, Sunil Kim, Chang Jung Kim, Ihun Song, Jaechul Park, Sangwook Kim, and Youngsoo Park, “Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor's channel layer”, Applied Physics Letters, vol. 93, pp. 172109-172111, 2008

2.      Huaxiang Yin, Sunil Kim, Hyuck Lim, Yosep Min, Chang Jung Kim, Ihun Song,  Jaechul Park, Sang-Wook Kim, A. Tikhonovsky, Jaewoong Hyun, Youngsoo Park, “Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory”, IEEE Transactions on Electron Devices, vol. 55, No. 8, pp. 2071-2077, Aug. 2008

3.      Hyuck Lim, Huaxiang Yin, Jin-Seong Park, Ihun Song, Changjung Kim, JaeChul Park, SunIl Kim, Sang-Wook Kim, Chang Bum Lee, Yong C. Kim, Young Soo Park, and Donghun Kang, “Double gate GaInZnO thin film transistors”, Applied Physics Letters, vol. 93, pp. 063505-063507, 2008

4.      Ihun Song, Sunil Kim, Huaxiang Yin, Chang Jung Kim, Jaechul Park, Sangwook Kim, Hyuk Soon Choi, Eunha Lee, Youngsoo Park, “Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory”, IEEE Electron Device Letters, vol. 29, No. 6, pp. 549-552, Jun. 2008

5.      Huaxiang Yin, Wenxu Xianyu, A. Tikhonovsky, Young Soo Park, “Scalable 3-D Fin-Like Poly-Si TFT and Its Nonvolatile Memory Application”, IEEE Transactions on Electron Devices, vol. 55, No. 2, pp. 578-584, Feb. 2008

6.      Huaxiang Yin, Wenxu Xianyu, Hans Cho, Xiaoxin Zhang, Jisim Jung, Doyoung Kim, Hyuck Lim, Kyungbae Park, Jongman Kim, T. Noguchi, “Advanced poly-Si TFT with fin-like channels by ELA”, IEEE Electron Device Letters, vol. 27, No. 5, pp. 357-359, May 2006

7.      殷华湘, 徐秋霞. 体硅CMOS FinFET结构与特性研究[J]. 电子学报, 2005, 33(8): 1484-1486

8.      Hyuck Lim, Huaxiang Yin, Wenxu Xianyu, Jang-Yeon Kwon, Xiaoxin Zhang, Han S. Cho, Jong-Man Kim, Kyung-Bae Park, Do Young Kim, Ji-Sim Jung and Takashi Noguchi, “Ultra-low sheet resistance on poly silicon film by excimer laser activation”, Journal of the Korean Physical Society, vol. 48-I, pp. S47-S50, Jan. 2005

9.      殷华湘, 王云翔, 刘明, 徐秋霞. 电子束曝光UV3正性抗蚀剂的工艺研究[J]. 微电子学, 2003, 33(6): 485-489

10.  Yin Huaxiang and Xu Qiuxia, “CMOS FinFET Fabricated on Bulk Silicon Substrate”, Chinese Journal of Semiconductors, vol. 24, No. 4, pp. 351-356, Apr. 2003

11.   Yin Huaxiang and Xu Qiuxia, “Structure Design Considerations of a Sub-50nm Self-Aligned Double-Gate MOSFET”, Chinese Journal of Semiconductors, vol. 23, No. 12, pp. 1267-1272, Dec. 2002

12.   Qiuxia Xu, He Qian, Huaxiang Yin, Lin Jia, Honghao Ji, Baoqing Chen, Yajiang Zhu, Min Liu, Zhensheng Han, Huanzhang Hu, Yulin Qiu, Dexin Wu, “The investigation of key technologies for sub-0.1-μm CMOS device fabrication”, IEEE Transactions on Electron Devices, vol. 48, No. 7, pp. 1412-1420, Jul. 2001

13.   Yin Huaxiang and Xu Qiuxia, “Forming of Very Shallow Junction for S/D Extension in Deep Sub-Micron CMOS Devices”, Chinese Journal of Semiconductors, vol. 21, No. 7, pp. 637-645, Jul. 2000

 

主要的国际学术会议报告:

1.      Huaxiang Yin, Sunil Kim, Jaechul Park, Ihun Song, Sang-Wook Kim, Jihyun Hur, Sungho Park, Sanghun Jeon, Chang Jung Kim,  “High performance low voltage amorphous oxide TFT Enhancement/Depletion inverter through uni-/bi-layer channel hybrid integration”, in Proceedings of IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, 2009, pp. 199-202

2.      Huaxiang Yin, Sunil Kim, Chang Jung Kim, Jae Chul Park, Ihun Song, Sang-Wook Kim, Sung-Hoon Lee, Youngsoo Park, “Bootstrapped ring oscillator with propagation delay time below 1.0 nsec/stage by standard 0.5µm bottom-gate amorphous Ga2O3-In2O3-ZnO TFT technology”, in Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2008, pp. 81-84

3.      W. Xianyu, Huaxiang Yin, H.S Cho, Xiaoxin Zhang, T. Noguchi, “New Excimer Laser Annealing Process for Single-Crystal 3-D Stacked Thin-Film Transistors”, in Proceeding International Semiconductor Device Research Symposium (ISDRS), Bethesda, MD, 2005, pp. 82-83

4.      Huaxiang Yin, Wenxu Xianyu, Hans Cho, Xiaoxin Zhang, Jisim Jung, Doyoung Kim, Hyuck Lim, Kyungbae Park, Jongman Kim, Jangyeon Kwon, and Takashi Noguchi, “Advanced Poly-Si TFT with Fin-Like Channels”, in Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD), Seoul, Korea, 2005, pp. 159-161

5.      Huaxiang Yin, Wenxu Xianyu, Jisim Jung, Hans Cho, Doyoung Kim, Kyungbae Park, Jangyeon Kwon, and T. Noguchi, “Investigation of the fin-like TFT structure in LTPS device,” in Proceeding  System Information Display (SID), Boston, MA, 2005, vol. XXXVI, pp. 1258–1261

6.      Yin Huaxiang, Xu Qiuxia, “Design considerations of the sub-50 nm self-aligned double gate MOSFET with a new channel doping profile”, in Proceedings of 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Shanghai, China, 2001, pp. 535-538

承担科研项目情况:
参与重大专项项目“22纳米关键工艺技术先导研究与平台建设”负责沟道应变工程研究;中科院百人计划创新研究项目;所创新基金项目
专利申请:
国内外专利申请100余项,美国专利超过30余项,代表专利有:
1. Huaxiang Yin, Young-soo Park, Sun-il Kim, “Inverted nonvolatile memory device, stack module, and method of fabricating the same”, US Patent 7,994,599 B2
2. Huaxiang Yin, I-hun Song, Chang-jung Kim, Sang-wook Kim, Sun-il Kim, “Inverter, method of manufacturing the same, and logic circuit including the inverter”, US Patent 7,977,978 B2
3. Huaxiang Yin, Takashi Noguchi, Hyuk Lim, Wenxu Xianyu, Hans S. Cho, “Poly-Si thin film transistor and organic light-emitting display having the same”, US Patent 7,999,322 B2
4. Huaxiang Yin, Wenxu Xianyu, Takashi Noguchi, Hans S. Cho, Ji-sim Jung, “Method of manufacturing a thin film transistor”, US Patent 7,611,932 B2
5. Huaxiang Yin, Hyuck Lim, Young-soo Park, Wenxu Xianyu, Hans S. Cho, “Microlens and an image sensor including a microlens”, US Patent 7,750,424 B2
6. Takashi Noguchi, Wenxu Xianyu, Huaxiang Yin, “Organic light emitting display with single crystalline silicon TFT and method of fabricating the same”, US Patent 7416924 B2
7. 徐秋霞, 殷华湘, 钱鹤. “锗预无定形注入结合低能注入形成超浅源漏延伸区的方法”. 专利号: 00135751, 公开日: 2002.07.24, 授权公告日: 2004.01.07
8. 殷华湘, 徐秋霞, “一种鱼脊形场效应晶体管的结构和制备方法”. 专利号: 200410088513.9, 公开日: 2006.05.10, 授权公告日: 2008.06.04
9. 殷华湘,陈大鹏,“半导体器件与制造方法”,申请号201110068069.4
备注:
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