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姓 名:
霍宗亮
性    别:
职 务:
职    称:
研究员
学 历:
通讯地址:
北京市朝阳区北土城西路3号
电 话:
010-82995798
邮政编码:
100029
传 真:
电子邮件:
huozongliang@ime.ac.cn

所属部门:
纳米加工与新器件集成技术研究室(三室)
简历:

教育背景
1994.9– 1998.7北京大学计算机科学技术系微电子专业   本科
1998.9– 2003.7北京大学微电子学系微电子学专业     硕博连读
 
工作简历
2003.9–2010.2韩国三星电子公司三星半导体研发中心 

2010.3 –  中国科学院微电子研究所

研究方向:

 新型半导体存储技术

学科类别:
社会任职:
获奖及荣誉:
代表论著:

1.    ZongLiang Huo, JunKyu Yang, SeungHyun Lim, SeungJae Baik, Juyul Lee, Jeong Hee Han, In-Seok Yeo, U-In Chung,Joo Tae Moon and Byung-Ii Ryu.  “Band Engineered Charge Trap Layer for highly Reliable MLC Flash Memory”, IEEE Sym. on VLSI Tech. 2007 (VLSI-2007) pp. 138-139

2.    ZongLiang Huo, SeungJae Baik, Shieun Kim, In-Seok Yeo, U-In Chung, Joo-Tae Moon,” Sub-6F2 Charge Trap Dynamic Random Access Memory Using a Novel Operation Scheme” IEEE 64th Device Research Conference(DRC2006), 2006, pp. 261

3.    Shieun Kim, Seung Jae Baik, Zongliang Huo, Young-Jin Noh, Chulsung Kim, Jeong Hee Han, In-Seok Yeo, U-In Chung, Joo Tae Moon, Byung-Il Ryu, “Robust multi-bit programmable flash memory using a resonant tunnel barrier”, IEEE International Electron Devices Meeting Technical Digest, 2005.( IEDM2005), pp.861-864. 

4.    Seung Jae Baik; Zongliang Huo; Seung-Hyun Lim; In-Seok Yeo; Siyoung Choi; U-In Chung; Joo Tae Moon, “STTM -promising nanoelectronic DRAM device”, 4th IEEE Conference on Nanotechnology, 2004.pp.45-46

5.    Dandan Jiang, Zongliang Huo, Manhong Zhang, Qin Wang, Jing Liu, Zhaoan Yu, Xiaonan Yang, Yong Wang, Bo Zhang, Junning Chen and Ming Liu” Performance Improvement of Si-NC memory device by using a novel programming scheme“, CSTIC 2011, Best Student Paper

6.    Chenxin Zhu, Zongliang Huo, Zhongguang Xu, Manhong Zhang, Qin Wang, Jing Liu,Shibing Long, and Ming Liu” Performance enhancement of multi-level cell nonvolatile memory by using a band-gap engineered high-к trapping layer“, Applied Physics Letters, 97,253503,2010,  APL Research Highlight Paper 

7.    Zhiwei Zheng, Zongliang Huo, Manhong Zhang, Chenxin Zhu, Jing Liu and Ming Liu, “Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer ,  Semicond. Sci. Technol. 26 (2011) 105015

8.    Dandan Jiang, Manhong Zhang, Zongliang Huo, Qin Wang, Jing Liu, Zhaoan Yu, Xiaonan Yang, Yong Wang, Bo Zhang, Junning Chen and Ming Liu A Study of Cycling Induced Degradation Mechanisms in Si Nanocrystal Memory Devices” Nanotechnology,22,254009,2011

9.    Yong Wang, Xiaonan Yang, Qin Wang, Shibing Long, Manhong Zhang, Zongliang Huo Bo Zhang, Ming Liu, “Optimization of Silicon Nanocrystals Growth Process by LPCVD for Non-Volatile Memory Application”, Thin Solid Films, vol. 519, issue 7, p2146

10.  Qi Liu, Shibing Long, Hangbing Lv, Wei Wang, ,Jiebin Niu, Zongliang Huo, Junning Chen, and Ming Liu, “Controllable growth of nanoscale conductive filaments in solid - electrolyte -based ReRAM by using metal nanocrystal cover bottom electrode“, ACS Nano,4 (10),6162-6168,2010

11.  Yuhui He,Ralph H. Scheicher, Anton Grigoriev, Rajeev Ahuja, Shibing Long, ZongLiang Huo, and Ming Liu, “Enhanced DNA sequencing performance through edge- hydrogenation of graphene electrodes”, Advanced Functional Materials 21(14), pp. 2674–2679, 2011

承担科研项目情况:

作为项目/课题负责人承担项目:

1.         科技部973重大研究计划项目 “分子电子学的基础与应用探索研究”的子课题“分子电路的基础与应用研究”

2.         国家自然科学基金委面上项目 “面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究”

3.         中科院百人计划知识创新项目  “新型闪存存储技术研究”

4.         中科院科研装备研制项目“新型半导体存储技术可靠性多功能综合评估平台”

5.         所长基金 “面向后20纳米结点新型存储器件的基础研究”

参与项目:

1.         国家02科技重大专项项目 “65-45-32纳米成套工艺研发与产业化”的子课题“32nm新型存储器关键工艺解决方案”

2.         科技部纳米重大研究计划项目  “纳米结构电荷俘获材料及高密度多值存储基础研究 

 

目前申请国际国内专利80余项,部分美国专利情况如下:

1.         Zongliang Huo, Seung-Jae Baik, In-Seok Yeo, “Semiconductor Memory Devices And Methods of fabricating the same”,  US 7274066 B2

2.         Zongliang Huo, Seung-Jae Baik, In-Seok Yeo, Hong-Sik Yoon, Shi-Eun Kim,” SRAM cells having inverters and access transistors therein with vertical Fin-Shaped Active regions” US 7368788B2

3.         Zongliang Huo, Seung-Jae Baik, In-Seok Yeo, Hong-Sik Yoon, Shi-Eun Kim , “Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure” ,      US 7338862 B2

4.         Zongliang Huo, Subramanya Mayya, Xiaofeng Wang, In-Seok Yeo, “Methods of forming nano line structures in microelectronic devices and related devices, ” US 7863138 B2

5.         Zongliang Huo, Seung-Jae Baik, In-Seok Yeo, Hong-Sik Yoon, Shi-Eun Kim, “Single transistor floating-body DRAM devices having vertical channel transistor structures and methods of fabricating the same”,  Pub. No, US 2006/0249770 A1

6.         ZongLiang Huo, In-Seok Yeo, “Semiconductor memory device having DRAM cell mode and non-volatile memory cell mode and operation method therefore”, Pub. No, US2008/0048239 A1

7.         ZongLiang Huo, Yeo Inseok Seung HyunLim ,Joo KyongHee, Yang JunKyu, “ Charge trap flash memory device and memory card and system including the same” Pub. No, US 2008/0246078 A1

8.         Zongliang Huo, Seung-Jae Baik, In-Seok Yeo, Hong-Sik Yoon, Shi-Eun Kim , “Single Transistor Floating body DRAM cell Having recess channel transistor structure” ,  Pub. No, US 2008/0128802 A1

9.         Zongliang Huo, SunJung Kim, SeungMoon Shin, MinBoo Lee, Kihyun Hwang, “Source/Drain Engineering for WOC improvement in VNAND Flash Memory” Pub. No, US2010/0579641  

10.     Hong-Sik Yoon, In-Seok Yeo, Seung-Jae Baik, Zong-Liang Huo, Shi-Eun Kim,” DRAM Device and methods of manufacturing the same”, US 7384841 B2

11.     Shi-Eun Kim, Seung-Jae Baik, Zong-liang Huo, In-Seok Yeo, Seung-hyun lim, Jeong-Hee Han“Multi-bit storageable non-volatile memory device”, Pub.No. US 2007/0007576 A1

12.     Jun-kyu Yang,Seung-Jae Baik,Jin-tae NOH,Seung-hyun Lim,Kyong-Hee Joo,Zong-Liang Huo, “Flash memory device with hybrid structure charge trap layer and method of manufacturing same,”   Pub.No, US 2008/0169501 A1

13.     Hong-Sik Yoon, In-Seok Yeo, Seung-Jae Baik, Zong-Liang Huo, Shi-Eun Kim” DRAM Device and methods of manufacturing the same, Appl. No. 12/149,406 

14.     Kim ByongJu, Kim Sunjung, Huo ZongLiang ,Yang Junkyu, Jo Seon-Ho ,Choi hanmei ,Kim YoungSun “NVM cell having new blocking barrier layer”, Appl. No. 382646

 

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