研究队伍
 
 
 
 
 
 
 
现在位置:首页 > 研究队伍 > 专家人才
 

姓 名:
龙世兵
性    别:
职 务:
副主任
职    称:
研究员
学 历:
博士
通讯地址:
北京市朝阳区北土城西路3号
电 话:
010-82995582
邮政编码:
100029
传 真:
010-82995583
电子邮件:
longshibing@ime.ac.cn

所属部门:
纳米加工与新器件集成技术研究室(三室)
简历:

教育背景 
1995.9-1999.7,北京科技大学物理系,本科

1999.9-2002.3,北京科技大学材料物理系,硕士

2002.4-2005.6,中国科学院微电子研究所,博士
 
工作简历 
2005.7-至今, 中国科学院微电子研究所,助理研究员, 副研究员

2010.3-2010.7, 国家自然科学基金委员会,信息科学部四处,兼聘

2011.2-2012.2, 西班牙巴塞罗那自治大学,电子工程系, 访问学者
 

研究方向:

纳米加工、阻变存储器

学科类别:
社会任职:

1. IEEE Member

2. 北京电子学会半导体专业委员会委员兼秘书

 3. Advanced Materials, Advanced Functional Materials, IEEE Electron Device Letters, IEEE Transactions of Electron Devices, IEEE Transactions on Nanotechnology, Applied physics Letters, Nanoscale, Nanaoscale Research Letters, Nanotechnology, Chemical Commnications, Electrochemical Solid-State Letters, Thin Solid Films, Journal of Physics D: Applied Physics, Applied Physics A, Journal of Materials Chemistry, Materials Chemistry and Physics, Physical Chemistry Chemical Physics, Chinese Physics, Chinese Physics Letters,Chinese Science, Chinese Science Buletin等杂志审稿人

获奖及荣誉:

  1.2013年国家优秀青年科学基金获得者 

  2.2014年北京市科学技术奖二等奖,阻变存储器及集成的基础研究,排名4/15 

  3. 2013年国家技术发明奖二等奖,高精度微纳结构掩模制造核心技术,排名6/6 

    4.2010年北京市科学技术奖一等奖,微纳结构自上而下制备核心技术与集成应用,排名5/15

代表论著:

  1.      《新型阻变存储技术》,科学出版社,20148月出版,编写第6 

  2.      Shibing Long, Luca Perniola, Carlo Cagli, Julien Buckley, Xiaojuan Lian, Enrique Miranda, Feng Pan, Ming Liu, and Jordi Suñé. Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO2-Based RRAM. Scientific Reports, 2013, 3, 2929.  

  3.      Shibing Long, Xiaojuan Lian, Carlo Cagli, Xavier Cartoixà, Riccardo Rurali, Enrique Miranda, David Jiménez, Luca Perniola, Ming Liu and Jordi Suñé. Quantum-size effects in hafnium-oxide resistive switching. Applied Physics Letters, 2013, 102, 183505. 

  4.      Shibing Long, Xiaojuan Lian, Tianchun Ye, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Suñé. Cycle-to-cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices. IEEE Electron Device Letters, 2013, 34(5), 623-625. 

  5.      Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Suñé. A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown. IEEE Electron Device Letters, 2013, 34(8), 999-1001. 

  6.      Shibing Long, Carlo Cagli, Daniele Ielmini, Ming Liu, and Jordi Suñé. Reset Statistics of NiO-Based Resistive Switching Memories. IEEE Electron Device Letters, 2011, 32(11): 1570-1572.  

  7.      Shibing Long, Carlo Cagli, Daniele Ielmini, Ming Liu, and Jordi Suñé. Analysis and modeling of resistive switching statistics. Journal of Applied Physics, 111, 074508 (2012).  

  8.      Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, David Jiménez, Hangbing Lv, Qi Liu, Ling Li, Zongliang Huo, Ming Liu, and Jordi Suñé. Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown. The 2013 IEEE International Reliability Physics Symposium (IRPS2013). 5A.6.1 - 5A.6.8. April 14-18, 2013, Monterey, CA, USA. 

  9.      Shibing Long, Qi Liu, Hangbing Lv, Yingtao Li, Yan Wang, Sen Zhang, Wentai Lian, Kangwei Zhang, Ming Wang, Hongwei Xie, Ming Liu. Resistive Switching Mechanism of Ag/ZrO2:Cu/Pt Memory Cell. Applied Physics A (2011) 102: 915-919.  

  10. Guoming Wang, Shibing Long*, Zhaoan Yu, Meiyun Zhang, Tianchun Ye, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, Jordi Suñé, and Ming Liu. Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation. Applied Physics Letters, 2015, 106(9), 092103. 

  11. Meiyun Zhang, Shibing Long*, Guoming Wang, Xiaoxin Xu, Yang Li, Qi Liu, Hangbing Lv, Xiaojuan Lian, Enrique Miranda, Jordi Suñé, and Ming Liu. Set statistics in CBRAM device with Cu/HfO2/Pt structure. Applied Physics Letters 2014, 105(19), 193501. 

  12. Guoming Wang, Shibing Long*, Zhaoan Yu, Meiyun Zhang, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Xiaobing Yan, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, and Ming Liu. Impact of program/erase operation on the performances of oxide-based resistive switching memory. Nanoscale Research Letters, 2015, 10, 39. 

  13. Meiyun Zhang, Shibing Long*, Guoming Wang, Ruoyu Liu, Xiaoxin Xu, Yang Li, Dinlin Xu, Qi Liu, Hangbing Lv, Enrique Miranda, Jordi Suñé, and Ming Liu. Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory. Nanoscale Research Letters 2014, 9: 694. 

  14. Xiaoyi Yang, Shibing Long*, Kangwei Zhang, Xiaoyu Liu, Xiaojuan Lian, Qi Liu, Hangbing Lv, Ming Wang, Hongwei Xie, Haitao Sun, Pengxiao Sun, Jordi Suñé and Ming Liu. Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology. Journal of Physics D: Applied Physics, 2013, 46, 245107. 

  15. Ming Wang, Chong Bi, Ling Li, Shibing Long, Qi Liu, Hangbing Lv, Nianduan Lu, Pengxiao Sun and Ming Liu. Thermoelectric Seebeck effect in oxide-based resistive switching memory. Nature Communications, 2014, 5, 4598. 

  16. Haitao Sun, Qi Liu, Congfei Li, Shibing Long, Hangbing Lv, Chong Bi, Zongliang Huo, Ling Li, and Ming Liu. Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology. Advanced Functional Materials, 24(36), 5679-5686, 2014. 

  17. Hangbing Lv, Xiaoxin Xu, Hongtao Liu, Ruoyu Liu, Qi Liu, Writam Banerjee, Haitao Sun, Shibing Long, Ling Li, and Ming Liu. Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory. Scientific Reports, 2015, 5, 7764. 

  18. Qi Liu, Jun Sun, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun, and Ming Liu. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM. Advanced Materials, 2012, 24, 1844-1849.  

  19. Hongtao Liu, Hangbing Lv*, Baohe Yang, Xiaoxin Xu, Ruoyu Liu, Qi Liu, Shibing Long, and Ming Liu*. Uniformity improvement of 1T1R RRAM with gate voltage ramp programming. IEEE Electron Device Letters, 2014, 35(12), 1224-1226. 

  20. Yingtao Li, Hangbing Lv, Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Kangwei Zhang, Zongliang Huo, and Ming Liu. Bipolar one diode-one resistor integration for high-density resistive memory applications. Nanoscale, 2013, 5, 4785-4789. 

  21. Hangbing Lv, Yingtao Li, Qi Liu, Shibing Long, Ling Li, and Ming Liu, Self-rectifying resistive switching device with a-Si/WO3 bilayer. IEEE Electron Device Letters, 2013, 34, 2, 229-231. 

  22. Haitao Sun, Hangbing Lv, Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Xiaoyu Liu, Xiaoyi Yang, Jiebin Niu, and Ming Liu. Overcoming the dilemma between RESET current and data retention of RRAM by lateral dissolution of conducting filament. IEEE Electron Device Letters, 2013, 34(7), 873-875. 

  23. Qi Liu, Jun Sun, Hongwei Xie, Xing Wu, Feng Xu, Tao Xu, Shibing Long, Hangbing Lv, Yingtao Li, Litao Sun, and Ming Liu. In-situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory. Applied Physics Letters, 2013, 102, 053502. 

  24. Ming Wang, Hangbing Lv, Qi Liu, Yingtao Li, Zhongguang Xu, Shibing Long, Hongwei Xie, Kangwei Zhang, Xiaoyu Liu, Haitao Sun, Xiaoyi Yang, and Ming Liu. Investigation of one dimension thickness scaling on Cu/HfOx/Pt resistive switching device performance. IEEE Electron Device Letters, 2012, 33(11), 1556-1558. 

  25. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Wei Wang, Qin Wang, Zongliang Huo, Yan Wang, Sen Zhang, Su Liu, and Ming Liu. Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device. IEEE Electron Device Letters, 2011, 32(3): 363-365.  

  26. Wentai Lian, Hangbing Lv, Qi Liu, Shibing Long, Wei Wang, Yan Wang, Yingtao Li, Sen Zhang, Yuehua Dai, Junning Chen and Ming Liu. Improved resistive switching uniformity in Cu/HfO2/Pt devices by using current sweeping mode. IEEE Electron Device Letters, 2011, 32(8), 1053-1055. 

  27. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Yan Wang, Sen Zhang, Wentai Lian, Ming Wang, Kangwei Zhang, Hongwei Xie, Su Liu and Ming Liu. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer. Nanotechnology, 22 (2011) 254028. 

  28. Qi Liu, Shibing Long, Hangbing Lv, Wei Wang, Jiebin Niu, Zongliang Huo, Junning Chen, and Ming Liu. Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode. ACS Nano, 2010, 4(10): 6162-6168.  

  29. Qi Liu, Shibing Long, Wei Wang, S. Tanachutiwat, Yingtao Li, Qin Wang, Manhong Zhang, Junning Chen and Ming Liu. Low Power and Highly Uniform Switching in ZrO2-based ReRAM with A Cu Nanocrystal Insertion Layer. IEEE Electron Device Letters, 2010, 31(11): 1299-1301. 

  30. Qingyun Zuo, Shibing Long, Shiqian Yang, Qi Liu, Lubing Shao, Qin Wang, Sen Zhang, Yingtao Li, Yan Wang, and Ming Liu. ZrO2-based memory cell with a self-rectifying effect for crossbar WORM memory application. IEEE Electron Device Letters, 2010, 31(4): 344-346.  

  31. Yingtao Li, Shibing Long, Manhong Zhang, Qi Liu, Sen Zhang, Yan Wang, Qingyun Zuo, Su Liu, and Ming Liu. Resistive switching properties of Au/ZrO2/Ag structure for low voltage nonvolatile memory applications. IEEE Electron Device Letters, 2010, 31(2): 117-119.  

  32. Yan Wang, Hangbing Lv, Wei Wang, Qi Liu, Shibing Long, Qin Wang, Zongliang Huo, Sen Zhang, Yingtao Li, Qingyun Zuo, Wentai Lian, Jianhong Yang and Ming Liu. Highly stable radiation hardened resistive switching memory. IEEE Electron Device Letters, 2010, 31(12), 1470-1472. 

  33. Chenxin Zhu, Zongliang Huo, Zhongguang Xu, Manhong Zhang, Qin Wang, Jing Liu, Shibing Long, and Ming Liu. Performance enhancement of multi-level cell nonvolatile memory by using a bandgap engineered high-k trapping layer. Applied Physics Letters, 2010, 97, 253503. 

  34. Yan Wang, Qi Liu, Shibing Long, Wei Wang, Qin Wang, Manhong Zhang, Sen Zhang, Yingtao Li, Qingyun Zuo, Jianhong Yang and Ming Liu. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications. Nanotechnology, 2010, 21, 045202. 

  35. Shiqian Yang, Qin Wang , Manhong Zhang, Shibing Long, Jing Liu, Ming Liu. Titanium tungsten nanocrystals embedded in SiO2/Al2O3 stacked gate dielectric for low-voltage operation in non-volatile memory. Nanotechnology, 2010, 21, 245201. 

  36. Jing Liu, Qin Wang, Shibing Long, Manhong Zhang and Ming Liu. A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application. Semiconductor Science and Technology, 2010, 25, 055013. 

  37. Qi Liu, Shibing Long, Wei Wang, Qingyun Zuo, Sen Zhang, Junning Chen, Ming Liu. Improvement of Resistive Switching Properties in ZrO2-based ReRAM with Implanted Ti Ions. IEEE Electron Device Letters, 2009, 30(12): 1335-1337.  

  38. Qi Liu, Chunmeng Dou, Yan Wang, Shibing Long, Wei Wang, Ming Liu, Manhong Zhang, and Junning Chen. Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device. Applied Physics Letters, 2009, 95, 023501. 

  39. Qingyun Zuo, Shibing Long, Qi Liu, Sen Zhang, Qin Wang, Yingtao Li, Yan Wang, and Ming Liu. Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory. Journal of Applied Physics, 106, 073724 (2009).  

  40. Weihua Guan, Shibing Long, Qi Liu, Ming Liu, Wei Wang. Nonpolar nonvolatile resistive switching in Cu doped ZrO2. IEEE Electron Devices Letters, 2008, 29(5): 434-437.  

  41. Weihua Guan, Ming Liu, Shibing Long, Qi Liu, Wei Wang. On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt. Applied Physics Letters, 2008, 93(22): 223506 

  42. Qi Liu, Weihua Guan, Shibing Long, Rui Jia, Ming Liu, and Junning Chen. Resistive switching memory effect of ZrO2 films with Zr+ implanted. Applied Physics Letters, 92, 012117 (2008) 

  43. Weihua Guan, Shibing Long, Rui Jia, Ming Liu. Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Applied Physics Letters, 91, 062111 (2007). 

  44. Weihua Guan, Shibing Long, Ming Liu, Qi Liu, Yuan Hu, Zhigang Li, Rui Jia. Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories. Solid State Electronics, 2007, 51: 806–811. 

    45. Weihua Guan, Shibing Long, Ming Liu, Zhigang Li, Yuan Hu and Qi Liu. Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide. Journal of Physics D: Applied Physics, 2007, 40: 2754–2758.

承担科研项目情况:

  作为第一负责人承担的项目:

  1.        国家优秀青年科学基金项目“新型非挥发性阻变存储器”,61322408

  2.        自然基金面上项目“三维集成高密度阻变存储器基础研究”,61274091

  3.        自然基金面上项目“掺杂提高二元金属氧化物电致电阻转变性能的作用机理研究” ,50972160

  4.        自然基金面上项目“面向SOC的高性能纳米硅单电子器件研究”,90607022

  5.        863探索导向类项目“基于二元金属氧化物的阻变存储器” ,2009AA03Z306

  6.        973课题“新型存储器件及工艺基础研究”, 2011CBA00602

  7.        973课题“纳米尺度硅基集成电路中新材料的基础研究”,2006CB302706

  8.        国家科技重大专项子课题“32nm RRAM关键工艺和技术” ,2009ZX02023-005-4

  9.        中国科学院重大科研装备研制项目“离子束溅射与刻蚀系统”,CAS YZ200840

  10.        中国科学院微电子研究所微电子器件与集成技术重点实验室课题“二元金属氧化物电阻转变机理研究”

  11.        中国科学院微电子研究所所长基金项目“金属纳米晶浮栅非挥发性存储器”

  专利申请:

  第一发明人授权专利:

  1.        一种纳米尺度非挥发性阻变存储器单元及其制备方法,ZL 201010574384.X,申请日2010-12-06

  2.        多功能离子束溅射与刻蚀及原位物性分析系统,ZL 201010574358.7,申请日2010-12-06

  3.        多功能离子束溅射设备,ZL 200910083499.6,申请日2009-05-06

  4.        一种纳米电子器件的制作方法,ZL 200910077523.5,申请日2009-01-21

  5.        用纳米晶材料作为库仑岛的纳米电子器件及其制作方法,ZL 200910077678.9,申请日:2009-02-11

  6.        一种金属纳米晶薄膜的制备方法,ZL 200610109562.5,申请日2006-08-10

  7.        一种硅基侧栅单电子晶体管及其制作方法,ZL 200610109561.0,申请2006-08-10

  8.        一种SOI基顶栅单电子晶体管及其制备方法,ZL 200610109563.X, 申请日2006-08-10

  9.        一种SOI基顶栅单电子晶体管及其制备方法,ZL 200610112107.0,申请日2006-08-09

  10.        一种纳米级库仑岛的制备方法,ZL 200610012129.X, 申请日2006-06-07

  11.        一种用负性电子抗蚀剂制备纳米电极的方法,ZL 200610003531.1, 申请日2006-02-09

  12.        采用正性电子抗蚀剂制备属纳米电极的方法,ZL 200510130438.2, 申请日2005-12-08

备注:
文章下载: