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Details of the People
Name	Shibing Long	Title	副主任
Highest Education	Doctor	Office	3 Beitucheng West Road, Chaoyang District, Beijing, PR China
Phone	010-82995582	Zip Code	100029
Fax	010-82995583	Email	longshibing@ime.ac.cn

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Seleted Publication：

　　1. 《新型阻变存储技术》，科学出版社，2014年8月出版，编写第6章

　　2. Shibing Long, Luca Perniola, Carlo Cagli, Julien Buckley, Xiaojuan Lian, Enrique Miranda, Feng Pan, Ming Liu, and Jordi Suñé. Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-Based RRAM. Scientific Reports, 2013, 3, 2929.

　　3. Shibing Long, Xiaojuan Lian, Carlo Cagli, Xavier Cartoixà, Riccardo Rurali, Enrique Miranda, David Jiménez, Luca Perniola, Ming Liu and Jordi Suñé. Quantum-size effects in hafnium-oxide resistive switching. Applied Physics Letters, 2013, 102, 183505.

　　4. Shibing Long, Xiaojuan Lian, Tianchun Ye, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Suñé. Cycle-to-cycle intrinsic RESET statistics in HfO₂-based unipolar RRAM devices. IEEE Electron Device Letters, 2013, 34(5), 623-625.

　　5. Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Suñé. A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown. IEEE Electron Device Letters, 2013, 34(8), 999-1001.

　　6. Shibing Long, Carlo Cagli, Daniele Ielmini, Ming Liu, and Jordi Suñé. Reset Statistics of NiO-Based Resistive Switching Memories. IEEE Electron Device Letters, 2011, 32(11): 1570-1572.

　　7. Shibing Long, Carlo Cagli, Daniele Ielmini, Ming Liu, and Jordi Suñé. Analysis and modeling of resistive switching statistics. Journal of Applied Physics, 111, 074508 (2012).

　　8. Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, David Jiménez, Hangbing Lv, Qi Liu, Ling Li, Zongliang Huo, Ming Liu, and Jordi Suñé. Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown. The 2013 IEEE International Reliability Physics Symposium (IRPS2013). 5A.6.1 - 5A.6.8. April 14-18, 2013, Monterey, CA, USA.

　　9. Shibing Long, Qi Liu, Hangbing Lv, Yingtao Li, Yan Wang, Sen Zhang, Wentai Lian, Kangwei Zhang, Ming Wang, Hongwei Xie, Ming Liu. Resistive Switching Mechanism of Ag/ZrO₂:Cu/Pt Memory Cell. Applied Physics A (2011) 102: 915-919.

　　10. Guoming Wang, Shibing Long*, Zhaoan Yu, Meiyun Zhang, Tianchun Ye, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, Jordi Suñé, and Ming Liu. Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation. Applied Physics Letters, 2015, 106(9), 092103.

　　11. Meiyun Zhang, Shibing Long*, Guoming Wang, Xiaoxin Xu, Yang Li, Qi Liu, Hangbing Lv, Xiaojuan Lian, Enrique Miranda, Jordi Suñé, and Ming Liu. Set statistics in CBRAM device with Cu/HfO₂/Pt structure. Applied Physics Letters 2014, 105(19), 193501.

　　12. Guoming Wang, Shibing Long*, Zhaoan Yu, Meiyun Zhang, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Xiaobing Yan, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, and Ming Liu . Impact of program/erase operation on the performances of oxide-based resistive switching memory. Nanoscale Research Letters, 2015, 10, 39.

　　13. Meiyun Zhang, Shibing Long*, Guoming Wang, Ruoyu Liu, Xiaoxin Xu, Yang Li, Dinlin Xu, Qi Liu, Hangbing Lv, Enrique Miranda, Jordi Suñé, and Ming Liu. Statistical characteristics of reset switching in Cu/HfO₂/Pt resistive switching memory. Nanoscale Research Letters 2014, 9: 694.

　　14. Xiaoyi Yang, Shibing Long*, Kangwei Zhang, Xiaoyu Liu, Xiaojuan Lian, Qi Liu, Hangbing Lv, Ming Wang, Hongwei Xie, Haitao Sun, Pengxiao Sun, Jordi Suñé and Ming Liu. Investigation on the RESET switching mechanism of bipolar Cu/HfO₂/Pt RRAM devices with a statistical methodology. Journal of Physics D: Applied Physics, 2013, 46, 245107.

　　15. Ming Wang, Chong Bi, Ling Li, Shibing Long, Qi Liu, Hangbing Lv, Nianduan Lu, Pengxiao Sun and Ming Liu. Thermoelectric Seebeck effect in oxide-based resistive switching memory. Nature Communications, 2014, 5, 4598.

　　16. Haitao Sun, Qi Liu, Congfei Li, Shibing Long, Hangbing Lv, Chong Bi, Zongliang Huo, Ling Li, and Ming Liu. Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology. Advanced Functional Materials, 24(36), 5679-5686, 2014.

　　17. Hangbing Lv, Xiaoxin Xu, Hongtao Liu, Ruoyu Liu, Qi Liu, Writam Banerjee, Haitao Sun, Shibing Long, Ling Li, and Ming Liu. Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory. Scientific Reports, 2015, 5, 7764.

　　18. Qi Liu, Jun Sun, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun, and Ming Liu. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM. Advanced Materials, 2012, 24, 1844-1849.

　　19. Hongtao Liu, Hangbing Lv*, Baohe Yang, Xiaoxin Xu, Ruoyu Liu, Qi Liu, Shibing Long, and Ming Liu*. Uniformity improvement of 1T1R RRAM with gate voltage ramp programming. IEEE Electron Device Letters, 2014, 35(12), 1224-1226.

　　20. Yingtao Li, Hangbing Lv, Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Kangwei Zhang, Zongliang Huo, and Ming Liu. Bipolar one diode-one resistor integration for high-density resistive memory applications. Nanoscale, 2013, 5, 4785-4789.

　　21. Hangbing Lv, Yingtao Li, Qi Liu, Shibing Long, Ling Li, and Ming Liu, Self-rectifying resistive switching device with a-Si/WO₃ bilayer. IEEE Electron Device Letters, 2013, 34, 2, 229-231.

　　22. Haitao Sun, Hangbing Lv, Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Xiaoyu Liu, Xiaoyi Yang, Jiebin Niu, and Ming Liu. Overcoming the dilemma between RESET current and data retention of RRAM by lateral dissolution of conducting filament. IEEE Electron Device Letters, 2013, 34(7), 873-875.

　　23. Qi Liu, Jun Sun, Hongwei Xie, Xing Wu, Feng Xu, Tao Xu, Shibing Long, Hangbing Lv, Yingtao Li, Litao Sun, and Ming Liu . In-situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory. Applied Physics Letters, 2013, 102, 053502.

　　24. Ming Wang, Hangbing Lv, Qi Liu, Yingtao Li, Zhongguang Xu, Shibing Long, Hongwei Xie, Kangwei Zhang, Xiaoyu Liu, Haitao Sun, Xiaoyi Yang, and Ming Liu. Investigation of one dimension thickness scaling on Cu/HfOx/Pt resistive switching device performance. IEEE Electron Device Letters, 2012, 33(11), 1556-1558.

　　25. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Wei Wang, Qin Wang, Zongliang Huo, Yan Wang, Sen Zhang, Su Liu, and Ming Liu. Reset Instability in Cu/ZrO₂:Cu/Pt RRAM Device. IEEE Electron Device Letters, 2011, 32(3): 363-365.

　　26. Wentai Lian, Hangbing Lv, Qi Liu, Shibing Long, Wei Wang, Yan Wang, Yingtao Li, Sen Zhang, Yuehua Dai, Junning Chen and Ming Liu. Improved resistive switching uniformity in Cu/HfO₂/Pt devices by using current sweeping mode. IEEE Electron Device Letters, 2011, 32(8), 1053-1055.

　　27. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Yan Wang, Sen Zhang, Wentai Lian, Ming Wang, Kangwei Zhang, Hongwei Xie, Su Liu and Ming Liu. Improvement of resistive switching characteristics in ZrO₂ film by embedding a thin TiO_x layer. Nanotechnology, 22 (2011) 254028.

　　28. Qi Liu, Shibing Long, Hangbing Lv, Wei Wang, Jiebin Niu, Zongliang Huo, Junning Chen, and Ming Liu. Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode. ACS Nano, 2010, 4(10): 6162-6168.

　　29. Qi Liu, Shibing Long, Wei Wang, S. Tanachutiwat, Yingtao Li, Qin Wang, Manhong Zhang, Junning Chen and Ming Liu. Low Power and Highly Uniform Switching in ZrO₂-based ReRAM with A Cu Nanocrystal Insertion Layer. IEEE Electron Device Letters, 2010, 31(11): 1299-1301.

　　30. Qingyun Zuo, Shibing Long, Shiqian Yang, Qi Liu, Lubing Shao, Qin Wang, Sen Zhang, Yingtao Li, Yan Wang, and Ming Liu. ZrO₂-based memory cell with a self-rectifying effect for crossbar WORM memory application. IEEE Electron Device Letters, 2010, 31(4): 344-346.

　　31. Yingtao Li, Shibing Long, Manhong Zhang, Qi Liu, Sen Zhang, Yan Wang, Qingyun Zuo, Su Liu, and Ming Liu. Resistive switching properties of Au/ZrO₂/Ag structure for low voltage nonvolatile memory applications. IEEE Electron Device Letters, 2010, 31(2): 117-119.

　　32. Yan Wang, Hangbing Lv, Wei Wang, Qi Liu, Shibing Long, Qin Wang, Zongliang Huo, Sen Zhang, Yingtao Li, Qingyun Zuo, Wentai Lian, Jianhong Yang and Ming Liu. Highly stable radiation hardened resistive switching memory. IEEE Electron Device Letters, 2010, 31(12), 1470-1472.

　　33. Chenxin Zhu, Zongliang Huo, Zhongguang Xu, Manhong Zhang, Qin Wang, Jing Liu, Shibing Long, and Ming Liu. Performance enhancement of multi-level cell nonvolatile memory by using a bandgap engineered high-k trapping layer. Applied Physics Letters, 2010, 97, 253503.

　　34. Yan Wang, Qi Liu, Shibing Long, Wei Wang, Qin Wang, Manhong Zhang, Sen Zhang, Yingtao Li, Qingyun Zuo, Jianhong Yangand Ming Liu. Investigation of resistive switching in Cu-doped HfO₂ thin film for multilevel non-volatile memory applications. Nanotechnology, 2010, 21, 045202.

　　35. Shiqian Yang, Qin Wang , Manhong Zhang, Shibing Long, Jing Liu, Ming Liu. Titanium tungsten nanocrystals embedded in SiO₂/Al₂O₃ stacked gate dielectric for low-voltage operation in non-volatile memory. Nanotechnology, 2010, 21, 245201.

　　36. Jing Liu, Qin Wang, Shibing Long, Manhong Zhang and Ming Liu. A metal/Al₂O₃/ZrO₂/SiO₂/Si (MAZOS) structure for high-performance non-volatile memory application. Semiconductor Science and Technology, 2010, 25, 055013.

　　37. Qi Liu, Shibing Long, Wei Wang, Qingyun Zuo, Sen Zhang, Junning Chen, Ming Liu. Improvement of Resistive Switching Properties in ZrO₂-based ReRAM with Implanted Ti Ions. IEEE Electron Device Letters, 2009, 30(12): 1335-1337.

　　38. Qi Liu, Chunmeng Dou, Yan Wang, Shibing Long, Wei Wang, Ming Liu, Manhong Zhang, and Junning Chen. Formation of multiple conductive filaments in the Cu/ZrO₂:Cu/Pt device. Applied Physics Letters, 2009, 95, 023501.

　　39. Qingyun Zuo, Shibing Long, Qi Liu, Sen Zhang, Qin Wang, Yingtao Li, Yan Wang, and Ming Liu. Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory. Journal of Applied Physics, 106, 073724 (2009).

　　40. Weihua Guan, Shibing Long, Qi Liu, Ming Liu, Wei Wang. Nonpolar nonvolatile resistive switching in Cu doped ZrO₂. IEEE Electron Devices Letters, 2008, 29(5): 434-437.

　　41. Weihua Guan, Ming Liu, Shibing Long, Qi Liu, Wei Wang. On the resistive switching mechanisms of Cu/ZrO₂:Cu/Pt. Applied Physics Letters, 2008, 93(22): 223506

　　42. Qi Liu, Weihua Guan, Shibing Long, Rui Jia, Ming Liu, and Junning Chen. Resistive switching memory effect of ZrO₂ films with Zr⁺ implanted. Applied Physics Letters, 92, 012117 (2008)

　　43. Weihua Guan, Shibing Long, Rui Jia, Ming Liu. Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Applied Physics Letters, 91, 062111 (2007).

　　44. Weihua Guan, Shibing Long, Ming Liu, Qi Liu, Yuan Hu, Zhigang Li, Rui Jia. Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories. Solid State Electronics, 2007, 51: 806–811.

45. Weihua Guan, Shibing Long, Ming Liu, Zhigang Li, Yuan Hu and Qi Liu. Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide. Journal of Physics D: Applied Physics, 2007, 40: 2754–2758.

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